ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1−xGex channel MOSFETs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5121-5128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electron-transport properties of strained-Si on relaxed Si1−xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steady- and nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic transport mechanisms that give rise to the performance enhancement experimentally observed. The different contributions of the conductivity-effective mass and the intervalley scattering rate reduction to the mobility enhancement as the Ge mole fraction rises have been discussed for several temperature, effective, and longitudinal-electric field conditions. Electron-velocity overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363493
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1998-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main nonradiative capture mechanisms, cascade and multiphonon emission, have been numerically simulated by the Monte Carlo method. To do so, both mechanisms were included in the frame of a previous numerical procedure to which the nonacoustic-phonon contribution was also added. Different centers were studied. Capture by shallow donors (P, As, and Sb) in n-type silicon were interpreted considering only the cascade process. Capture by acceptors levels of platinum, gold, and titanium in silicon, and one level of Cr, EL2, and EL3 in gallium arsenide, were analyzed considering only multiphonon emission, and calculating the values of Huang–Rhys factor when it is not available. In the study of capture by attractive deep centers, such as single ionized donor centers of sulfur and selenium in silicon, both cascade and multiphonon mechanisms must be combined. In this case the importance of the nonacoustic phonon has been shown in the cascade process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358835
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Density of states of a two-dimensional electron gas including nonparabolicity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4267-4269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression for the density of states per unit area and unit of total energy in a two-dimensional electron gas is proposed. This density of states depends on the energy of the electrons in each subband and on the potential well function averaged in the subband by the envelope function. The resulting expression is shown to approach the density of states per unit area and unit energy, which is obtained by integrating the three-dimensional density in the potential well, in the limit of the high levels. This fact is then used for checking the validity of the expression, obtaining excellent results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355967
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A Monte Carlo study on electron mobility in quantized cubic silicon carbide inversion layers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6857-6865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron transport properties in cubic silicon carbide (β-SiC) quantized inversion layers have been studied and the results of electron mobility calculations at room and higher temperatures have been reported. To do so, we have developed a Monte Carlo simulator used in conjunction with the self-consistent solution of the Poisson and Schroedinger equations. We show that for a fixed inversion charge concentration, β-SiC inversion layer electrons spread less into the bulk than Si ones as a consequence of the effective mass values. Therefore, the defects of the SiO2/β-SiC (interface roughness, charged centers) will strongly affect electron transport properties. We present simulated mobility curves for quantized β-SiC inversion layers taking into account different scattering mechanisms which are then compared to Si mobility curves. Special attention has been paid to the effect of Coulomb scattering due to both interface- and oxide-trapped charges. Mobility curves obtained for different interface-trapped charge concentrations show that electrons in silicon carbide inversion layers are more affected by surface defects at room and higher temperatures than they are in silicon inversion layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365245
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1787-1792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the presence of charged centers of different sign on the electron mobility in n-channel metal-oxide-semiconductor transistors are studied by a Monte Carlo simulation. By solving the Poisson equation for the potential fluctuations, an expression for the Coulomb-scattering rate when there are charged centers of different sign is provided. In addition, it is shown that, when charges of different sign exist in the structure, local band-bending fluctuations are greater, thus resulting in lower electron mobility. In contrast, since in this case the potential mean value is lower, the influence of the charged centers on the threshold voltage is lesser. The electron mobility in compensated substrates is also analyzed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360209
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A comparison of models for phonon scattering in silicon inversion layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4128-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359500
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A comprehensive model for Coulomb scattering in inversion layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 924-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356448
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Direct and trap-assisted elastic tunneling through ultrathin gate oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5116-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461062
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3396-3404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang–Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler–Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398603
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1764-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface-roughness scattering on electron transport properties in extremely thin double gate silicon-on-insulator inversion layers has been analyzed. It is shown that if the silicon layer is thin enough the presence of two Si–SiO2 interfaces plays a key role, even for a very low transverse effective field, where surface-roughness scattering is already noticeable, contrary to what happens in bulk silicon inversion layers. We have studied the electron transport properties in these devices, solving the Boltzmann transport equation by the Monte Carlo method, and analyzed the influence of the surface-roughness parameters and of the silicon layer thickness. For low transverse effective fields, μSR decreases as the silicon layer decreases. However, at higher transverse effective fields, there is a different behavior pattern of μSR with Tw since it begins to increase as Tw decreases until a maximum is reached; for lower silicon layer thicknesses, surface-roughness mobility abruptly falls. Finally we have compared the behavior of μSR versus Tw for double gate silicon-on-insulator and single gate silicon-on-insulator inversion layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331076
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...