Publication Date:
2011-06-07
Description:
Author(s): A. Lévesque, P. Desjardins, R. Leonelli, and R. A. Masut We have studied the temperature dependence (∼10–293 K) of the photoluminescence (PL) from InAs/InP(001) quantum dot (QD) multilayers with thin spacer layers (∼5 nm) emitting in the 0.6–0.8 eV spectral region. The QD emission redshifts less than the InAs bulk material band gap with increasing tempera... [Phys. Rev. B 83, 235304] Published Mon Jun 06, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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