Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 935-937
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This letter describes the formation of a thin amorphous layer at the tetragonal-Ta/Cu interfaces, which appear in copper metallization structures of microelectronic devices. The disordered layer grows up to 4 nm when annealed at between 400 and 600 °C. Since Ta and Cu are immiscible according to thermodynamic data, this is an unusual observation. A mechanism for the amorphous phase formation is proposed using both physical and chemical considerations. A high content of Cu is detected in the Ta layer up to 5 nm from the interface when annealed at 600 °C. Although the adhesion is promoted by the interface reaction, a sufficiently thick Ta underlayer is recommended for efficient blocking of Cu diffusion. Neither solid-state amorphization nor Cu diffusion into Ta is observed at bcc-Ta/Cu interfaces. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124559
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