ISSN:
1573-9066
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Summary 1. The homogeneous region of chromium disilicide lies in the range Cr1.01Si2-CrSi2.03. 2. The minimum electric conductivity and the maximum width of prohibited zone (about 0.9 eV) corresponds to the composition of the compound. 3. With deviation from the stoichiometric composition toward the boundaries of the region of homogeneity, the energy of activation of the current carriers is approximately halved (to 0.4–0.5 eV). 4. The possibility, in principle, of purifying CrSi2 by the method of zonal crystallization in quartz ampoules with high-frequency heating was shown. 5. A scheme of bonds in CrSi2 is proposed on the basis of a crystallochemical analysis. 6. On the basis of investigations of the microstructure and the data of thermal and x-ray phase analyses a state diagram is constructed for part of the Mn-Si system in the region rich in silicon. 7. It is shown that there is no MnSi2 compound in the system, and that there exists a phase richer in manganese, Mn3Si5. The compound Mn3Si5 is formed by the peritectic reaction HC + MnSi ⇋ Mn3Si5 at 1159°, has a narrow region of homogeneity (about 1%) and a semiconductor nature (AE is about 0.2 eV).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00773918
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