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  • 1
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of forming polycrystalline silicon (polysilicon) from amorphous silicon in several seconds is presented in this letter. This solid-phase crystallization process was carried out with the pulsed rapid thermal annealing method using a metal as the seed. The crystal-growth process was monitored with an optical microscope and the polysilicon structure was confirmed by a micro-Raman shift measurement. Polysilicon film within a 30-micrometer channel was formed using 3 pulses of 1-s 800 °C heating/5-s cooling. It took more than 13 h using a 500 °C furnace annealing method to form polysilicon film within a 12-micrometer channel. Since the substrate is only exposed to the high temperature for a very short period of time, heat effects in the substrate are minimized. This method has the potential for use in the fabrication of small geometry devices, such as thin film transistors, on large-area, low temperature glass substrates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117068
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  • 2
    Electronic Resource
    Electronic Resource
    Etch mechanism in the low refractive index silicon nitride plasma-enhanced chemical vapor deposition process (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 144-146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter the author reports a generalized mechanism for the plasma-enhanced chemical vapor deposition silicon nitride process which includes simultaneous surface deposition and etching reactions. The etching mechanism is caused by the hydrogen plasma in combination with the high plasma potential. For each deposition versus power or refractive index versus power curve there is a critical point which is determined by the critical power Wcritical. When the power is lower than Wcritical, the process can be explained by conventional deposition mechanisms. When the power is higher than Wcritical, the hydrogen etching mechanisms becomes important. Wcritical depends on other process parameters such as the composition of the feeding stream. Experimental results confirmed the hydrogen etching mechanism, which is selective.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110380
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  • 3
    Electronic Resource
    Electronic Resource
    Reactive ion etch damages in inverted, trilayer thin-film transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2790-2792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma damages on the inverted, trilayer a-Si:H thin-film transistor from an n+ RIE process have been detected. These damages include a high threshold voltage, a high off current, and the divergence of the transfer characteristic curves under different drain voltages. Both the bulk of the films and the film-film interfaces were damaged by the plasma. The former was proved by the relation between the threshold voltage shift and the gate dielectric layer thickness and materials. The latter was demonstrated by the plasma radiation exposure experiment. Plasma radiation, instead of the charge buildup on devices, is the major cause of the thin-film transistor's abnormality. All damages were easily repaired with a thermal annealing step.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108093
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  • 4
    Electronic Resource
    Electronic Resource
    Thin-film transistors with multistep deposited amorphous silicon layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2173-2175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inverted, staggered thin-film transistors (TFTs), in which the a-Si:H layer is deposited stepwise, using different rf powers, were prepared and studied. Using identically prepared top and bottom interface silicon layers, the multilayer a-Si:H TFT characteristics can be better or worse than those of a single-layer a-SiH TFT, depending on the rf power used to deposit the middle layer and the total number of layers added. The result can be explained by considering the mechanism of the SiH4 plasma deposition process. For example, the extra hydrogen generated in the high power plasma can passivate dangling bonds, which enhances the transistor performance. The high intensity plasma radiation source can generate defects at the film/film interface as well as in the bulk of the film, which deteriorates the transistor. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115093
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  • 5
    Electronic Resource
    Electronic Resource
    Single-gate multichannel amorphous silicon thin-film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3174-3176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A redundant thin-film transistor (TFT), which has multiple sub-TFTs sharing one gate, is presented and studied. This transistor can be fabricated with two photomasks. It has transfer characteristics similar to those of a conventional single-channel TFT, except for (1) the negative-direction shift of the curve in the low drain current range, (2) the two-stage turn-on mechanism in the high drain current range, and (3) the high photoleakage current at the high drain voltage. The first phenomenon is due to the inclusion of electron accumulation interfaces in the semiconductor layer. The second phenomenon is caused by the sequential turn-on of various sub-TFTs at various gate voltages. The last phenomenon can be explained by the photoresistor characteristics of the top a-Si:H layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115153
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  • 6
    Electronic Resource
    Electronic Resource
    Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2821-2823 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unusual doping gas effects on the plasma enhanced chemical vapor deposited heavily phosphorus-doped silicon film have been observed. The deposition rate increases linearly with the silane (1% phosphine) feed gas flow rate. However, the film's resistivity increased abruptly, i.e., more than 2 orders of magnitude, in a narrow range of flow rate. This was inconsistent with the change of the film's dopant or hydrogen concentration. It was consistent with the variation of the film's morphology. For example, below the transition flow rate, the film had a large volume fraction of microcrystal; above the transition flow rate, the film was amorphous. The enhancement of the doping efficiency is probably due to the segregation of the dopant at grain boundaries. In addition, the deposition rate was facilitated by the existence of the doping gas. It is possible that the doping gas influences the surface electrical characteristics during the film growing process, which accounts for the increase of the deposition rate and the mechanism of the crystal formation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120146
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature copper etching based on a plasma–copper reaction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1002-1004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising room-temperature copper etching process is described. The copper thin film can be etched into a vertical profile at a high rate using a parallel-plate reactor under mild conditions. The key factor for the success of this process is a copper swelling phenomenon from the plasma–copper reaction. The reaction product has been identified as a crystalline copper chloride. Key parameters that influence the reaction process and the final copper profile have been studied. In addition to the plasma phase chemistry, ion bombardment plays a critical role in the process. Although results reported in this letter are based on the chlorine plasma, similar results can be obtained with other halogen gases. This process is potentially important to the fabrication of advanced microelectronic, storage, display, and optical devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347388
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  • 8
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    Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film (1997)
    American Institute of Physics
    Details
    Publication Date: 1997-11-10
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 9
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    A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer (2013)
    American Institute of Physics
    Details
    Publication Date: 2013-01-21
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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  • 10
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    Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon (1996)
    American Institute of Physics
    Details
    Publication Date: 1996-08-19
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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