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  • 1
    Electronic Resource
    Electronic Resource
    Electrical properties of Al-SiO2Si structure with plasmochemical insulator: Potential barrier heights and electron capture in SiO2 (1981)
    Springer
    Russian physics journal 24 (1981), S. 57-62 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown that in the forbidden band of the plasmochemical SiO2 there are electron capture centers with capture cross section 2·10−13cm2, density 2·1019 cm−3, and thermal activation energy 0.41 eV for the process of trap emptying. It is noted that the charge state of the insulator in an external electric field is unstable, this being due to the exchange of electrons between the insulator and the aluminum electrode. An energy band diagram of the structure is deduced from the results of the investigation. The potential barrier heights were found to be 2.78 eV at the Al-SiO2 interface and 4.36 eV at the SiO2-Si interface. The dynamical current-voltage characteristic of the structure is used to determine the density of mobile ions in the insulator, which is found to be S·1013 cm−2 at T=230°C and rate of change 5 mV/sec of the voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00894498
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  • 2
    Electronic Resource
    Electronic Resource
    Electrophysical characteristics of strontium tantalate (1989)
    Springer
    Russian physics journal 32 (1989), S. 556-559 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Results are offered from a study of thin film strontium tantalate (SrTa2O6) obtained by vacuum hf deposition. Temperature and frequency dependences of electrical conductivity, ɛ, tan δ, and thermostimulted dielectric depolarization current are studied in Al-SrTa2O6-Al structures. Point defect parameters and their distribution over energy in the dielectric forbidden zone are determined. Polarization and electrical conductivity mechanisms are considered, and it is concluded that strontium tantalate shows promise as a dielectric material for integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896131
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical conductivity of an Al-Al2O3-Al thin-film MOS structure (1978)
    Springer
    Russian physics journal 21 (1978), S. 520-521 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895563
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  • 4
    Electronic Resource
    Electronic Resource
    Metal-insulator-semiconductor light modulators utilizing the Franz-Keldysh effect in gallium arsenide (1980)
    Springer
    Russian physics journal 23 (1980), S. 1015-1019 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study was made of the electroabsorption kinetics, as well as of the spectral and field dependences of the contrast and efficiency of modulation of light in Al-SiO2-GaAs-n+-GaP structures near the fundamental absorption edge of GaAs (875–910 nm). Values of the contrast amounting to 10–12 and the modulation efficiency of 30–40% were achieved. It was demonstrated that optical data storage was possible with the aid of an He-Ne laser. Optical memory was observed in Al-SiO2-(n-n+-GaAs structures on application of voltage pulses causing carrier accumulation; the effect was due to the capture of electrons at the SiO2-GaAs interface. The absorption edge of epitaxial GaAs films on GaP substrates had an exponential profile in the photon energy range 1.37≤hν≤1.40 eV infields 0≤E 5≤6.5·104 V/cm. An empirical relationship was obtained for the spectral and field dependences of the absorption coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896446
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  • 5
    Electronic Resource
    Electronic Resource
    Mobility of holes and density of states at Si-SiO2 interfaces (1980)
    Springer
    Russian physics journal 23 (1980), S. 1022-1025 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An investigation was made of the Hall and conductivity mobilities of holes in an inversion channel, and the C-V as well as G-V characteristics of Al-SiO2-Si structures were recorded. It was established that the technology of fabrication of MIS structures influenced the parameters of the Si-SiO2 interface. It was found that chemodynamic polishing of silicon plates before oxidation improved significantly the properties of the Si-SiO2 interface. A relationship was found between the density of the surface states (Nss) and the mobility of holes in an inversion channel. It was found that the high mobility of holes at the channel opening threshold was mainly due to a reduction in Nss at the Si-SiO2 interface and in the insulator near this Si-SiO2 interface. In addition to the phonon scattering mechanism, the scattering by the charge in the surface states at the Si-SiO2 interface also played an important role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896448
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