ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Stimulated emission and laser action under N2 laser radiation and electron-beam excitation at room temperature was studied in ZnSe epitaxial layers grown by metal-organic vapor-phase epitaxy. The laser threshold was about Ithr=1 MW/cm2, the pulse energy was Eem=0.3 μJ at the excitation intensity of Iexc=26 MW/cm2. The duration was tem=2 ns and the wavelength was λem=473.2–475.2 nm. Stimulated emission and laser action are due to the recombinations in a high-density electron-hole plasma at Iexc(approximately-greater-than)Ithr. The light amplification takes place in both the Fabry–Pérot cavity and in the scheme of the zig-zag ray propagation inside the crystal without feedback. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359229
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