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  • 1
    Electronic Resource
    Electronic Resource
    Performance and application of a superlattice infrared photodetector with a blocking barrier (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 943-948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared photodetector that contains a superlattice structure and a blocking barrier was investigated. The photodetector shows advantages including a low operating voltage (〈0.7 V), wide detection bandwidth, flexible miniband engineering, and in particular, voltage-tunable spectral responsivity. The blocking barrier not only prohibits the dark current but also acts as a high-pass energy filter to tune the spectral responsivity. The zero background peak detectivity of our detector is 3.7×109 cm Hz0.5/W (9.7 μm) at −0.5 V and 2.2×1010 cm Hz0.5/W (6.7 μm) at −0.1 V. Since the spectral responsivity at different biases is independent, temperature sensing is feasible by taking the ratio of the measured photocurrent at different biases. A demonstration of temperature sensing by using our superlattice infrared photodetector with a blocking barrier is also shown in this article. Those results show the superlattice is a simple and efficient structure for the design of a multicolor infrared photodetector. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430887
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the dark current in the bulk of InAs diode detectors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5454-5458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on analysis and comparison of the dark current characteristics between InAs p-n and p-i-n diodes at the temperature range from 30 to 300 K. The situation that the dark current is completely due to the bulk instead of the surface leakage is made sure by passivation treatment. The experimental results agree well with a tunnel diode model in which the p-n and p-i-n diodes are described, respectively, with a linear electrical field and a constant electrical field. The diffusion current in our diodes is dominated by the electron diffusion in the p-type material. Through this model and detailed analysis, we conclude that the tunneling current can be suppressed with an intrinsic layer and a low n-type doping density while the diffusion current can be decreased with a high p-type doping density. The advantage of the p-i-n structure is not only to cut down the tunneling current but also to increase the uniformity. In terms of this model, a new p-i-n diode is designed to dramatically increase its zero-bias resistance area product and improve the detector performance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362734
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  • 3
    Electronic Resource
    Electronic Resource
    Application of superlattice bandpass filters in 10 μm infrared detection (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1533-1535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, experimental evidence has revealed that the energy distribution of the dark current in a typical multiple quantum well GaAs infrared detector is extremely broad, in contrast to the narrowly distributed photocurrent. In this letter, we present the current transfer ratio of an infrared hot-electron transistor with a superlattice collector filter. From the current transfer characteristics, we demonstrate that the superlattice is able to collect electrons with specific energy against a broad background. The energy filtering characteristics can be attributed to the underlying band structure of the superlattice. When the filter is applied to infrared radiation detection, the detectivity of the transistor is improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105169
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  • 4
    Electronic Resource
    Electronic Resource
    Lifetime of excess electron–hole pairs measured with white noise performance of the photocurrent (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1836-1840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified method to measure the lifetime of the excess electron–hole pairs generated by laser beams is proposed. Under the applied bias, excess carriers pass through the sample within the transit time and form the photocurrent Ip. The related white-noise component of the photocurrent can be written as 4egIp, where g is the ratio of the lifetime over the transit time. The lifetime can then be obtained by determining g from the white noise performance. Since the transit time can be adjusted with the applied biases and the sample length, the measured lifetime may be as small as 100 ns with the measurement system even having the analytic frequency range of 10 kHz only. A GaAs sample grown by molecular beam epitaxy is taken as an example to measure the excess carrier's lifetime. It is concluded from the experiments that the lifetime of excess carriers in our sample is primarily caused by the indirect recombination via the deep trap centers within the band gap. The nonradiative lifetime is not really a constant and its variation versus the laser intensity indeed follows the prediction of the Shockley–Read–Hall recombination theory. This confirms the accuracy of our measurement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372099
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  • 5
    Electronic Resource
    Electronic Resource
    Low dark current infrared hot-electron transistor for 77 K operation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 908-910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, thermal imaging using quantum well infrared photodetector (QWIP) focal plane arrays has been demonstrated. However, the operating temperature needs to be kept around 60 K due to the large dark current occurring at higher temperatures. In order to achieve thermal imaging at 77 K, we have designed and demonstrated two infrared hot-electron transistor structures, whose dark current is two to three orders of magnitude lower than that of a QWIP. The resultant dark current falls within the limit of the charge handling capacity of a readout circuit, and the infrared detection is demonstrated to be background limited at 77 K. The noise equivalent temperature difference of the detectors is estimated to be 14 and 26 mK, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109869
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  • 6
    Electronic Resource
    Electronic Resource
    Hot-electron distribution in multiple quantum well infrared photodetectors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2091-2093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hot-electron distribution in the GaAs/AlxGa1−xAs multiple quantum well structure of 10-μm infrared photodetectors is measured with a built-in energy analyzer at different temperatures. The distribution width is found to depend strongly on T in the T≈40 to 90 K range. It increases with T, reaches a maximum at around 70 K, and then decreases at higher T's. The experiment makes it possible to unambiguously identify thermally assisted tunneling as the dominant source of the dark current at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110602
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  • 7
    Electronic Resource
    Electronic Resource
    Suppression of partition noise in infrared hot-electron transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 238-240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noise properties of hot electrons in three different infrared hot-electron transistors have been characterized. We observed that there is a reduction of generation-recombination noise after the hot electrons passed through the built-in electron energy filters. The magnitude of the reduction depends on the band structure of the filters, and can be attributed to the lack of partition noise associated with the quantum transport of the hot electrons. Based on this observation, low noise infrared hot-electron transistors can be designed using appropriate filters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111515
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  • 8
    Electronic Resource
    Electronic Resource
    Superlattice band structure probed by tunneling hot-electron injection (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 456-458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling hot-electron injection is used to probe superlattice (SL) minibands and the effect of a magnetic field (B) on a 10-μm infrared (IR) detector. Within each miniband, the data agree with the transmission calculation including nonparabolicity, but outside the miniband, the data show that around 15% of electrons can pass through the SL due to impurity scattering. When B is applied, the injection energy of the hot electrons increases slightly. For the IR detector samples, a Gaussian hot-electron distribution gives a better fit to the data than the Lorentzian one, indicating that inhomogeneous broadening is significant in these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107883
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  • 9
    Electronic Resource
    Electronic Resource
    Multicolor infrared detection realized with two distinct superlattices separated by a blocking barrier (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2251-2253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multicolor infrared photodetector was realized with two superlattices separated by a blocking barrier. The photoresponse is switchable between 7.5–12 and 6–8.5 μm by the bias polarity, and is also tunable by the bias magnitude in each wavelength regime. In addition, our detector exhibits advantages including little temperature dependence of the spectral response and the same order of responsivity in the two wavelength regimes. The measured peak responsivities in the two regimes are 117 mA/W at 9.8 μm under 1 V and 129 mA/V at 7.4 μm under −0.8 V, respectively. Also, the detectivities are comparable with the conventional multistack detector. The zero background peak detectivities are 2.3×1010 cm Hz0.5/W at 50 K and 9.8 μm under 0.7 V, and 8.7×1010 cm Hz0.5/W at 70 K and 7.4 μm under −0.7 V. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466537
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  • 10
    Electronic Resource
    Electronic Resource
    Multicolor infrared detection using two stacks of superlattice structures in a back-to-back configuration (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2240-2242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage-controlled multicolor detection with a two-stack GaAs/AlGaAs superlattice structure is reported. Each stack contains a superlattice and current blocking layers. The responsivity of each stack has a voltage-tunable spectral range and can be turned on or off by controlling the bias polarity. In a back-to-back configuration of the two stacks, a variable detection range with peak wavelength at 5.5, 6.8, 8.5, and 10.8 μm is achieved by changing the applied voltage at 45 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310206
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