ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract It is found experimentally that the relaxation of bleaching in GaAs, which takes place when charge carriers are photogenerated by a high-power picosecond optical pulse, is slowed as the beam diameter F increases. Relaxation of the bleaching is caused by a decrease in the concentration of carriers due to recombination-induced superluminescence in GaAs. It is found that as the diameter F increases, the rate of superluminescence recombination slows, although the intensity of the superluminescent emission should increase. This apparent contradiction is explained with the help of theory.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187423
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