ISSN:
1608-3415
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract It is shown that structure–impurity and electrophysical parameters of the Si/SiO2 system can be stabilized by annealing the system in a halogen-containing atmosphere after thermal oxidation of Si. The underlying physicochemical ideas are represented in the form of a general (application-independent) mathematical model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1026692103275
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