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  • 1
    Electronic Resource
    Electronic Resource
    Strategies for the synthesis of highly concentrated Si1−yCy diamond-structured systems (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2117-2119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1−yCy thin films on (001) Si substrates. Films with carbon compositions ranging up to 20 at. % were deposited at substrate temperatures of 600–740 °C using gas mixtures of SiH4 with C(SiH3)4 or C(SiH2Cl)4, which are (C–H)-free precursors incorporating Si4C tetrahedra. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry, including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information. Raman spectroscopy suggested that the substitutional C concentration obtained using this protocol was higher than that obtained by other methods. The addition of small amounts of GeH4 to the gas mixture had a remarkable effect on growth rates and film crystallinity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121294
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  • 2
    Electronic Resource
    Electronic Resource
    Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 203-205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a highly efficient method of growing thin oriented films of GaN on basal plane sapphire and (100) Si substrates using an exclusively inorganic single-source precursor free of carbon and hydrogen. Cross sectional transmission electron microscopy of the highly conformal films revealed columnar material growth on Si and heteroepitaxial columnar growth of crystalline GaN on sapphire. Rutherford backscattering spectroscopy (RBS) of layers grown at 700 °C confirmed stoichiometric GaN. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. With respect to current chemical vapor deposition processes for GaN growth, our approach offers a number of potentially important improvements. These include high growth rates of 5–350 nm/min, low deposition temperature of 650–700 °C, nearly ideal Ga–N stoichiometry, elimination of the highly inefficient use of toxic ammonia, and a carbon–hydrogen free growth environment that could prove to be beneficial to p-doping processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117372
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of heteroepitaxial diamond-structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2407-2409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report growth of high quality heteroepitaxial Ge1−xCx alloys on Si(100) with C concentrations ranging from 1.5 to 5 at.%. The materials were obtained by reactions of the novel methylgermanes CH3GeH3 and HC(GeH3)3 with GeH4 at 470 °C using ultrahigh-vacuum chemical-vapor deposition techniques. The crystallinity, composition, and microstructure of the films were characterized by Rutherford backscattering, carbon-resonance spectroscopy, and cross-sectional transmission electron microscopy. Ge1−xCx (x=0.015–0.030) materials were deposited using CH3GeH3 and displayed excellent crystallinity. Films with higher C content were deposited using HC(GeH3)3. These films were epitaxial and of high crystallinity but they also displayed interfacial defects which sometimes persisted through the entire layer. Electron diffraction data and carbon-ion channeling experiments indicated that carbon primarily occupied substitutional sites in the Ge diamond-cubic lattice. Secondary ion mass spectrometry revealed that the films were pure and highly homogeneous. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116149
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  • 4
    Electronic Resource
    Electronic Resource
    Morphological control and structural characteristics of crystalline Ge–C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 958-960 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical precursors are used to grow crystalline Ge–C materials with unusual morphologies that depend on the molecular design of the precursor and the C concentration. Ge–C nanorods with overall C content of about 13–15 at. % and lattice constants close to that of pure Si grew very rapidly from the surface of a 40 nm Ge–C epitaxial film. Coherent carbide islands are formed after epitaxial growth of 20 nm Ge1−xCx (x=9 at. %) on (100)Si. Lower reaction temperatures resulted in extremely low growth rate of epitaxial Ge1−xCx (x=3–5 at. %) heterostructures with very flat surfaces implying two-dimensional layer-by-layer growth. The use of precursor chemistry as reported here to control morphology and composition in the Ge–C system may provide a simple and reliable synthetic route to a new family of Si-based heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123422
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of thin Si80C20 films based upon Si4C building blocks (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 930-932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C–H free, carbon source tetrasilyl methane, C(SiH3)4. The precursor decomposes at temperatures in the range 600–700 °C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120876
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  • 6
    Electronic Resource
    Electronic Resource
    Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 883-885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of a simple and highly efficient chemical approach to growing GaN thin films between 150 and 700 °C using a single molecular source, H2GaN3. Uncommonly low-temperature growth of nanocrystalline GaN films with a wurtzite structure is readily achieved at 150–200 °C from the thermodynamically driven decomposition of the precursor via complete elimination of the stable and relatively benign H2 and N2 by-products. Highly oriented columnar growth of crystalline material is obtained on Si at 350–700 °C and heteroepitaxial growth on sapphire at 650 °C. Crucial advantages of this precursor include: significant vapor pressure which permits rapid mass transport at 22 °C; and the facile decomposition pathway of stoichiometric elimination of H2 and N2 over a wide temperature and pressure range which allows film growth at very low temperatures and pressures (10−4–10−8 Torr) with growth rates up to 80 nm per minute. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123398
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  • 7
    Electronic Resource
    Electronic Resource
    Simple chemical routes to diamond-cubic germanium–tin alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3607-3609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of a simple chemical route to growing Ge1−xSnx semiconductors using ultrahigh-vacuum chemical vapor deposition and the molecular precursor (Ph)SnD3 as the source of Sn atoms. Thin films were deposited on oxidized and oxide-free Si by reactions of (Ph)SnD3 with Ge2H6 at 350 °C. The composition, microstructure, and bonding properties of the films were characterized by Rutherford backscattering, high-resolution analytical electron microscopy, and Raman spectroscopy. As-deposited Ge1−xSnx on oxidized Si displayed good crystallinity which improved significantly by annealing at 400 °C. High-resolution electron microscopy and diffraction indicated a diamond-cubic structure with lattice constants intermediate to those of Ge and α-Sn. As-deposited Ge1−xSnx on pure Si was monocrystalline and epitaxial. Nanoprobe analysis in plan view and cross section revealed that the as-deposited and annealed materials were homogeneous with good chemical purity. The Raman spectra showed bands corresponding to Ge–Ge and Sn–Ge vibrations with frequencies consistent with a random tetrahedral alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376156
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of Ethynyl-Substituted Precursors to Carbon-Nitrogen-Sulfur Extended Structures: Reactions of C3N3F3 and C2N2SCl2 with Alkali-Metal (Trimethylsilyl)acetylides (1994)
    s.l. : American Chemical Society
    Chemistry of materials 6 (1994), S. 636-639 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00041a014
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  • 9
    Electronic Resource
    Electronic Resource
    Novel Synthetic Routes to Carbon-Nitrogen Thin Films (1994)
    s.l. : American Chemical Society
    Chemistry of materials 6 (1994), S. 811-814 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00042a018
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  • 10
    Electronic Resource
    Electronic Resource
    Novel Synthetic Routes to Carbon Nitride (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 1422-1426 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00055a023
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