ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowiresand nanorods have received intensive attention because of their potential applications in variousfields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of thevertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si(111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at400 °C and their effect on the formation of ZnO nanorods at 300 °C was evaluated by FESEM, XRD,and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity,and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing therandomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods withdiameters of 150-200 nm were successively fabricated at very low growth temperature, while forsample without ZnO buffer the ZnO films with rough surface were grown
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.101.pdf
Permalink