ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (ηi) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of ηi(approximately-greater-than)60% at room temperature have been obtained for quantum wells with Lz≥40 A(ring). It is shown that structures with Lz〈40 A(ring) exhibit a sharp decrease in ηi associated with nonradiative recombination of the high energy part of nonequilibrium carriers in the confining layers even in the presence of comparatively high potential barriers for Γ electrons.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357002
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