Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 1767-1769
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The diffusion of copper in semi-insulating liquid-encapsulated-Czochralski-grown gallium arsenide at 800 °C was examined by photoluminescence, photoetching, secondary ion mass spectroscopy, and temperature dependent Hall measurements. A diffusion rate of 4.5×10−6 cm2 s−1 was obtained. It could be estimated that the diffusion takes place predominantly by substitution on lattice sites. Diffusing copper migrates preferentially along the walls of the dislocation cellular network. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117479
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