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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8498-8502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high temperature rapid thermal annealing (HT-RTA) using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon (poly-Si) films in association with their microscopic structure were studied. Samples with a phosphorus concentration of 3.1×1017–6.0×1020 cm−3 were prepared and annealed by HT-RTA ranging from 1150 to 1350 °C. During HT-RTA, the sample surface was laterally swept by gas flames. The resistivity of the samples decreased with increasing annealing temperature, and the lowest resistivity was 4.8×10−4 Ω cm for the sample doped with P of 6.0×1020 cm−3 when annealed at 1350 °C. Hall mobility, on the other hand, increased first and then decreased with increasing P concentration. The highest Hall mobility was 71.3 cm2/V s for the sample annealed at 1350 °C of which the P concentration was 3.5×1019 cm−3. The results suggest that the grain boundary potential barriers for carriers decreased with increasing doping concentration and annealing temperature, and that the total area of grain boundaries in the films decreased with increasing annealing temperature because of secondary grain growth and the shrinkage of boundary width. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3947-3969 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The usefulness of particle beams for radiation therapy has been well and widely recognized. For the cure of cancer patients, many accelerator facilities have already been utilized, and some new facilities are now being put into operation, or are under construction. Considering the medical and biological requirements, light heavy ions with an energy of several hundred MeV/nucleon are regarded as being the most suitable species. A reasonable choice to this end is an accelerator complex, for an example, one comprising an ion source, an injector linac, and a synchrotron. The ion source is of great importance, since its characteristics strongly affect the overall performance of the accelerator system. A pulsed Penning source (PIGIS) has been successfully used at Lawrence Berkeley Laboratory. Recently, at the National Institute of Radiological Sciences a low-duty pulsed PIGIS for the heavy-ion medical accelerator in Chiba (HIMAC) has been developed; it has both a long lifetime and a high peak intensity. As other types of ion sources, an electron-beam ion source (EBIS) and an electron-cyclotron-resonance ion source (ECRIS) are being developed at several laboratories. An EBIS is basically a pulsed source, and is being successfully used at Saclay. By using an after-glow mode, two ECRISs have made remarkable progress at Grenoble and the Grand Accelerateur National d'Ions Lourds; similar tests are proceeding for the Schwer-Ionen Synchrotron at the Gesellschaft für Schwer-Ionenforschung, the booster at Centre d'Europeen de Recherche Nucleaire, and the HIMAC. These different types of heavy-ion sources are discussed from the viewpoint of their application to radiation therapy.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1459-1464 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of gas flame annealing on the structure of polycrystalline Si films was studied using transmission electron microscopy and electron spin resonance. This annealing technique involved heating the sample surface to more than 1100 °C using flat gas flames with a scan rate of 1 mm/s and a heating rate of about 260 °C/min. Electron microscopy images revealed that the secondary grain growth proceeded with increasing the number of annealing times (annealing frequency) and that the grain size for samples annealed at 1360 °C was more than 1 μm whereas secondary grain growth was not significant for samples annealed at 1150 °C. Further, it was found that the spin density in the samples annealed at 1360 °C decreased from 1.5×1018 cm−3 to 3.8×1017 cm−3. It was concluded from the spin resonance results and the electron microscopy images that the secondary grain growth consists of two processes, the initial structural rearrangement of the grain boundaries and the subsequent grain growth. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1766-1770 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A structural model of a-Si and a model for its transient phases have been proposed. In these models, it is assumed that a-Si is composed of many small regions (or clusters with a radius of about 50 A(ring)) having different free energies. When a-Si is rapidly heated to a temperature slightly less than 1450 K so as to avoid crystallization, it transforms to a new phase in which both a-Si clusters and super-cooled l-Si coexist. By using these models, anomalous phenomena observed in explosive crystallization and enhanced diffusion phenomena in rapid thermal annealing (RTA) process can be explained. Furthermore, the viscosity of super-cooled Si fluid at 1000 °C induced by the RTA process is estimated to be 107–108 mPa s, which leads to the determination of T0 value of about 1300 K in Vogel–Fulcher–Tammann (VFT) relation. However, this T0 value differs from that previously reported. This discrepancy has been discussed and it is concluded that T0 in the VFT relation is not a constant but a function of (dT/dt). © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1171-1173 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact 2.45 GHz ECR ion source has been developed at National Institute of Radiological Sciences (NIRS). The source was designed to provide doubly charged carbon ions, aiming at easy maintenance of the source. A set of permanent magnets was adopted to realize a minimum B structure. In pulse operation with a duty factor of 5%, the beam performance was measured with He, CO2, CH4, and N2 gases. With CO2 gas, analyzed beam currents are 160 and 15 eμA for C+ and C2+, respectively. Through the measurement of the microwave amplitude in the plasma chamber, it was found that the microwave power was not transmitted into the plasma chamber efficiently. © 1996 American Institute of Physics.
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Heavy Ion Medical Accelerator in Chiba (HIMAC) at National Institute of Radiological Sciences (NIRS) is the first heavy-ion accelerator complex dedicated to cancer therapy. HIMAC is equipped with two kinds of ion sources. The PIG ion source is an indirectly heated cathode type, which is operated with a very low-duty factor. The ECR ion source has a single closed ECR zone with 10 GHz microwaves. Both sources realize good stability and reproducibility with easy operation, and satisfy the requirements for radiotherapy. They have been successfully used for clinical trials since June of 1994, and several tens of cancer patients have already been treated with 290–400 MeV/u carbon beams. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1435-1437 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In order to study beam optics of NIRS-ECR ion source used in the HIMAC project, the EGUN code has been modified to make it capable of modeling ion extraction from a plasma. Two versions of the modified code are worked out with two different methods in which 1D and 2D sheath theories are used, respectively. Convergence problem of the strong nonlinear self-consistent equations is investigated. Simulations on NIRS-ECR ion source and HYPER-ECR ion source are presented in this paper, exhibiting an agreement with the experiment results.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 545-547 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In order to realize new investigations on physics, biology, and other fields, a metallic ion beam is quite effective and essential. To produce the metallic ion beam in an electron cyclotron resonance (ECR) ion source, how to supply the metallic gas into the ECR plasma is most important. At present, the NIRS-HEC, which is an 18 GHz ECR ion source installed for the Heavy Ion Medical Accelerator in Chiba at the National Institute of Radiological Sciences (NIRS), enables us to produce a stable Fe9+ beam of 180 eμA by the metal ions from volatile compounds technique. In addition, the development of a new gas supply method, using the electron-bombardment technique, is in progress. In this method, the tip of a metal target rod (2–6 mm diameter) at a high positive potential is melted by bombarding the thermoelectrons emitted from a surrounding hot filament and the evaporated gas is supplied into the ECR plasma. © 2002 American Institute of Physics.
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Experimental results on an 18 GHz electron cyclotron resonance (ECR) ion source (NIRS-HEC) and a 10 GHz ECR ion source (NIRS-ECR) at National Institute of Radiological Sciences (NIRS) show that an extracted beam intensity strongly depends on the radial magnetic field distribution generated by a permanent sextupole magnet. In order to understand these results, we simulated beam extraction under strong influences of space charge. In the simulation, a current intensity at a different position of an extraction slit is assumed to be roughly proportional to a corresponding transverse area of the ECR zone under the assumption that ions are extracted along a longitudinal magnetic flux line. The calculations show that an optimum value of the sextupole magnetic field strength may exist for a given extraction configuration and beam intensity. Based on the simulation, beam intensity measurements have been performed with six sextupole magnets having different magnetic field strengths for two ion sources, and the experimental results are consistent with the calculations. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1061-1063 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The Heavy Ion Medical Accelerator in Chiba at the National Institute of Radiological Sciences (NIRS) is not only dedicated to cancer therapy, it is also utilized with various ion species for basic experiments of biomedical science, physics, chemistry, etc. Two electron cyclotron resonance (ECR) ion sources are installed for production of gaseous ions. One of them, the NIRS-ECR, is a 10 GHz ECR ion source, and is mainly operated to produce C4+ ions for daily clinical treatment. This source realizes good reproducibility and reliability and it is easily operated. The other source, the NIRS-HEC, is an 18 GHz ECR ion source that is expected to produce heavier ion species. The output ion currents of the NIRS-ECR and the NIRS-HEC are 430e μA for C4+ and 1.1e mA for Ar8+, respectively. © 2000 American Institute of Physics.
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