ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f11) ions at ∼1.54 μm are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 μm main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H2 or O2 flow (FWHM 7–10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368100
Permalink