ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The nitrogenated diamond-like carbon films (a-C:H:N) were deposited on Si-wafer bythe rf-PECVD method with the addition of nitrogen to the mixture gas of methane and hydrogen.We were investigating the effect of the additive nitrogen gases and annealing in relationshipbetween bonding structure and electrical properties of the deposited films. The electricalconductivity of films increased with the flow rate of nitrogen increasing up to 10 sccm. Also asannealing temperature was increased, the electrical conductivity of films increased. The structureanalysis results show that an increase of the flow rate of nitrogen and annealing temperature favorthe formation of sp2 bonding in the films. Therefore, we confirmed that the increase of the electricalconductivity is due to structure change by graphitization of the films
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/51/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.317-318.589.pdf
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