ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The thin films of indium tin oxide (ITO) are used for a variety of electronic devices such assolar cells, touch panels, liquid crystal displays (LCDs). However, these electronic devices are notstrong enough against heavy impact since their ITO thin films are deposited on glass substrates.Therefore, ITO thin films were prepared by the inclination opposite target type DC magnetronsputtering equipment onto the Polyethylene Terephthalate (PET) substrate at room temperature usingoxidized ITO with In2O3 and SnO2 in a weight ratio of 9:1. In this study, the transmittance, resistivityand electromagnetic wave shielding effectiveness of the ITO thin films prepared at various sputteringtime (20~80min namely film thickness; 130~500nm) are measured. The results show thattransmittance of the ITO thin films could show about 70% in the range of a visible ray by the variationof film thickness. It also can be seen that a minimum exists in the resistivity of ITO thin films for thevariation of film thickness. Electromagnetic wave shielding effectiveness was increased as filmthickness increased
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.345-346.1585.pdf
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