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  • 1
    Electronic Resource
    Electronic Resource
    Strain-Induced Deformation in Magnesia–Alumina Layered Composites (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Ceramic beams are induced in situ to form complex shapes at elevated temperature without the application of an external stress. This process has been demonstrated for thin alumina substrates coated with a layer of magnesia. The internal strain causing the substrates to deform at elevated temperature arises as a consequence of strain mismatch accompanying the penetration of the coating into the substrate. The magnitude of the deformation depends on the amount of coating applied, on the thickness of the substrate, on the density of the substrate, and on the temperature. During exposure of the beams to elevated temperature, the magnesia coating reacts with the alumina substrate to form the spinel phase; the resulting volume change accompanying the phase transformation is likely the predominant driving force for deformation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00410.x
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase crystallization of amorphous Si1−xGex films deposited on SiO2 by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3042-3047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated solid phase crystallization behavior of the molecular beam epitaxy grown amorphous Si1−xGex (x=0 to 0.53) alloy layers using x-ray diffractometry and transmission electron microscopy (TEM). Our results show that the thermal budget for the full crystallization of the film is significantly reduced as the Ge concentration in the film is increased. In addition, we find that a pure amorphous Si film crystallizes with a strong (111) texture while that of the Si1−xGex alloy film crystallizes with a (311) texture suggesting that the solid phase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized film shows that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with a high density of microtwins in the grains while that of the Si0.47Ge0.53 alloy is more or less equiaxed shape with a much lower density of defects. From these results, we conclude that the crystallization mechanism changes from a twin-assisted growth mode to a random growth mode as the Ge concentration in the film is increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358654
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Cl incorporation on the performance of amorphous silicon thin film transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4081-4085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of Cl incorporation on the performance of amorphous silicon thin film transistors (a-Si:H(:Cl) TFTs). The off-state leakage current of a-Si:H(:Cl) TFTs under light illumination is much lower than that of a-Si:H TFTs, because the photoconductivity of a-Si:H(:Cl) is much lower than that of conventional a-Si:H. The a-Si:H(:Cl) films deposited between [SiH2Cl2]/[SiH4]=0.04 and[SiH2Cl2]/[SiH4]=0.12 show p-type conduction, leading to the much lower photoconductivity. The TFT using a-Si:H(:Cl) deposited with [SiH2Cl2]/[SiH4]=0.04 exhibits a field effect mobility of 0.41 cm2/V s and a threshold voltage of 5.56 V; however the off-state leakage current under light illumination is two orders of magnitude smaller than that of a conventional a-Si:H TFT. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366260
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  • 4
    Electronic Resource
    Electronic Resource
    Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron-doped silicon layer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2139-2141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Without buffer layers, a lightly boron-doped epitaxial layer of good crystalline quality has been directly grown on a heavily boron-doped silicon layer by eliminating misfit dislocations in the heavily boron-doped layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of an n+/p diode fabricated in the epitaxial silicon has been measured to be 0.6 nA/cm2 at 5 V. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112769
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  • 5
    Electronic Resource
    Electronic Resource
    Lattice relaxation in InxAl1−xAs/GaAs heterostructure grown on exact oriented and misoriented GaAs substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3657-3659 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined lattice relaxation properties of 2 μm thick InxAl1−xAs epitaxial layers grown simultaneously on a (100) exact oriented GaAs substrate and on a 2° misoriented GaAs substrate by low pressure metalorganic chemical vapor deposition method. Double crystal x-ray diffractometry has been used to determine the alloy compositions at various azimuthal angles. As a result of (400) x-ray rocking curve analysis, it was found that the full width at half-maximum (FWHM) of x-ray rocking curves for both samples were strongly dependent on the azimuthal angle, indicating that the lattice relaxation depended greatly on the substrate orientation. From the data of {511} asymmetric measurements for four different directions, the In contents of the epitaxial layers found were 24%. The In0.24Al0.76As epitaxial layers grown on an exact oriented substrate and on a misoriented substrate both showed 82% relaxation, which was a larger value in comparison with the similarly mismatched InGaAs/GaAs heterostructure. The periodic FWHM of the x-ray rocking curves shows that the anisotropy of residual strain was independent of the nominal substrate misoriented direction. For both types of substrate, it is most likely that the variation of the FWHM originates from asymmetric densities of misfit dislocation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114131
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  • 6
    Electronic Resource
    Electronic Resource
    Shape Evolution of SrTiO3 Crystals During Coarsening in a Titania-Rich Liquid (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: To identify factors that might affect capillary driving forces and interface structure-dependent mechanisms for coarsening, we have used a stereological analysis to determine the changes in the morphology of SrTiO3 crystals in contact with a titania-rich liquid at 1500°C. A combination of flat and curved surfaces is observed in contact with the liquid. The (100) surface is the most common, followed by (110). A range of surfaces in the 〈100〉 zone are also found, but with a lower frequency. The areas of the {100} and {110} surfaces are approximately equal at the initial stage, but after 24 h of growth, the {100} surface area is more than twice as great as the {110} surface area. At this point, {100} surfaces make up more than 25% of the surface area in contact with the liquid. The results suggest that morphological changes during growth continuously reduce the average surface energy and interface mobility. This provides a plausible explanation for coarsening rates that decrease faster than predicted by the classical theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00185.x
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of an Interlayer in a Nano-Scale SiO〈sub〉2〈/sub〉 Layer on Si Substrate by X-Ray Reflectivity (XRR) Analysis (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 1689-1692 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In the study, an interlayer was observed in a nano-meter scale SiO2 overlayer on Sisubstrate by X-ray reflectivity(XRR) analysis and a new method is introduced for the XRRanalysis of SiO2 ultra-thin films on Si substrate. The normalized reflectivity curves were analyzedby fitting with the calculated reflectivity curves which were also normalized with the samereference curves. The XRR analyses show that the variation of the positions of the thicknessfringes in the measured reflectivity curve is caused by the interference effect from two oxide layersof different refractive indices and of different thicknesses with each other. The result indicates thatthere exists a SiO2 interlayer of a different refractive index between the SiO2 overlayer and the Sisubstrate. The analytical method used in the study determines the thickness of a ultra-thin SiO2layer on Si with low uncertainty
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.1689.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    The Construction of Slow Positron Beam System in Kriss (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 175-178 (Nov. 1994), p. 145-148 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.175-178.145.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Orientation Distribution of Σ3 Grain Boundary Planes in Ni before and after Grain Boundary Engineering (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 558-559 (Oct. 2007), p. 641-647 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The distribution of grain boundary plane orientations in polycrystalline Ni has beenmeasured before and after grain boundary engineering. The grain boundary engineeredmicrostructure has a relatively higher concentration of Σ3 grain boundaries and, when compared tothe initial structure, more of these boundaries have orientations that are inclined by more than 10°from the (111) orientation of the ideal coherent twin. Although the conventionally measured grainsize is not affected by the grain boundary engineering process, the average size of the regionscontaining only Σ3n grain boundaries increases by nearly a factor of two. The observations indicatethat the increase in the relative population of Σ3 grain boundaries results both from the preferentialelimination of random grain boundaries and the generation of new Σ3 grain boundaries which donot have (111) grain boundary plane orientations
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.558-559.641.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Grain Boundary Energy and Grain Growth in Highly-Textured Al Films and Foils: Experiment and Simulation (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 495-497 (Sept. 2005), p. 1255-1260 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Relative grain boundary energy as a function of misorientation angle was measured in a cube-oriented, 120 µm-thick Al foil and in a 〈111〉 fiber-textured, 1.7 µm-thick Al film using a multiscale analysis of the grain boundary dihedral angles. For the Al foil, the energies of low-angle boundaries increased with misorientation angle, in good agreement with the Read-Shockley model. For the Al film, two energy minima were observed for high-angle boundaries. Grain growth was studied in 25 and 100 nm-thick films that were annealed at 400 °C for a series of times in the range of 0.5 to 10 h. For the 100 nm-thick film, grains approximately doubled their size (equivalent circular diameter) before grain growth stagnated. The steady-state distributions of reduced grain area for two-dimensional, Monte Carlo Potts and partial differential equation based simulations showed excellent agreement with each other, even when anisotropic boundary energies were used. However, the simulated distributions had fewer small grains than the experimental distributions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.495-497.1255.pdf
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