ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CoxIn2S3+x thin films with various relative compositions were grown on thoroughly cleaned glass plates by the spray pyrolysis method. The substrate temperature during growth was maintained at 270 °C and the film then annealed in a vacuum chamber at 2×10−5 Torr at 500 °C for 30 min. The grown CoxIn2S3+x thin films, which had a composition of x=0.0–0.6, showed the tetragonal structure of In2S3, but above x=0.6 the films were amorphous. The energy gap for these films decreased with increasing x composition, and the impurity absorption spectra in near infrared region, ascribed to Co2+ ions, were observed at 13 333, 5970, and 4166 cm−1, which are the 4A2(F)−4T1(P), 4A2(F)−4T1(F), and 4A2(F)−4T2(F) transitions, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337145
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