ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC substrates produced at II-VI, Inc. have been characterized using x-ray rocking curvemapping (topography). The rocking curves have been measured in the [removed info]-scan mode for the (0006)Bragg reflection of 6H and the (0004) reflection of 4H SiC substrates. The maps containinformation extracted from the rocking curves, such as the peak angle ([removed info]) and the rocking curvebroadening (FWHM). In the case when lattice distortion is present due to the elastic or plasticdeformation, the peak angle ([removed info]) changes gradually upon scanning, with the d[removed info]/dx gradientproportional to the lattice curvature in the plane of diffraction. Multi-peak reflections and/or sharpchange in the value of [removed info] indicate the presence of misoriented grains. X-ray rocking curve mappingof SiC substrates yields excellent measures of crystalline quality that contain important informationon the lattice strain and sub-grain misorientation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.729.pdf
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