ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Effects of impurity doping on optical properties of epitaxially grown Ga0.47In0.53As semiconductors lattice-matched to InP have been studied. The absorption coefficient decreased and the photoluminescent peak energy increased at very high doping levels, due to a Burstein–Moss shift. Absorption in n-type Ga0.47In0.53As was negligible at a wavelength of 1.55 μm when the donor (Si) concentration was higher than 7.7 × 1018cm−3, but was higher than 4000 cm−1 at λ = 1.3 μm. Absorption in p-type Ga0.47In0.53As was 2600 cm−1 and 7000 cm−1 at 1.55 and 1.3 μm, respectively, when the acceptor (Be) concentration was 3.4 × 1019cm−3. Emission from n-type Ga0.47In0.53As experienced a maximum shift of 170 meV towards higher energies relative to emission from undoped Ga0.47In0.53As, while emission from p-type Ga0.47In0.53As shifted 45 meV. The Burstein–Moss effect was used in growth of 1.55-μm distributed Bragg mirrors having 20 pairs of quarter-wave n−Ga0.47In0.53As/InP layers. Reflectivity greater than 95% and a stop-band width of 60 nm were demonstrated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008908415428
Permalink