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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 670-674 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instead of the conventional flat collimator a curved collimator was used in double-crystal x-ray topography. The curvature of the collimator was adjusted so that the Bragg condition for x-ray diffraction was uniformly satisfied over a wide area of the silicon wafer. The image area of the wafer was wide enough to characterize the local lattice distortion induced by test element groups of metal–oxide–semiconductor capacitors formed on the wafer. The lattice distortion was measured as variations in lattice plane spacing and in lattice plane orientation using local angular deviations from the Bragg condition. These angular deviations were determined by fitting the x-ray intensities measured at the same point on a series of topographs taken around the Bragg peak to the rocking curve of the sample. The lattice plane spacing changed abruptly by 10−6 at the boundary between the areas of gate oxide (11 nm thick) and the areas of field oxide (400 nm thick), and showed less variation within these areas. The lattice plane orientation changed monotonically in each area, with an inclination of the order of 10−5 rad within the largest gate oxide area (5×5 mm2). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380406
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of crystal imperfection on high-resolution diffraction profiles of silicon single crystals measured by highly collimated x-ray beams (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2246-2248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined high-resolution diffraction profiles of as-grown and annealed magnetic-field-applied Czochralski (MCZ) silicon crystals which were about 300 μm thick and [001] oriented, and compared these profiles with the ultraplane wave x-ray topographs. Rocking curves for the symmetric 220 diffraction were measured in the Laue geometry using a (+m, −n, +n) separated three-crystal monochromator. Strain introduced in the sample preparation process gave a reduced oscillatory profile of a rocking curve although chemical etching recovered subsidiary peaks of the rocking curve. Strain frozen in as-grown crystals also gave a reduced oscillatory-profile, but a large number of oxygen precipitates produced by thermal annealing caused little reduction of subsidiary peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104940
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  • 3
    Electronic Resource
    Electronic Resource
    Time-resolved x-ray measurement system for studying the lattice deformation of semiconductor crystals under laser irradiation : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2342-2345 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the outline of a time-resolved x-ray measurement system developed at the Photon Factory to study the pulsed laser annealing of silicon crystals. This system consists of a triple-crystal diffractometer, Q-switched Nd:YAG laser, and two fast detector electronics using a plastic scintillation counter, and enables us to examine the time-change behavior of nearly intrinsic rocking curves under laser irradiation with a time resolution of about 50 ns. The difference in the recovery from lattice deformation between 1.06-μm laser annealing and 0.53-μm laser annealing is clarified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140764
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  • 4
    Electronic Resource
    Electronic Resource
    Performance of an imaging plate as an x-ray area detector used for plane-wave x-ray diffraction topography (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4487-4491 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report the linearity, spatial resolution, and granularity of x-ray intensity images recorded on imaging plates (IPs). The IP-processing system, designed for use with a transmission electron microscope (TEM), was used to evaluate the influence of these characteristics on profiles of local lattice distortion in silicon obtained by plane-wave x-ray diffraction topography (PWT). The signal intensity was linear with x-ray doses over four orders of magnitude of intensity, as has also been reported in the case of TEM. The modulation transfer function and root mean square of x-ray intensity images were measured to evaluate the spatial resolution and granularity. The results indicate that profiles of lattice distortion with a period of more than 0.5 mm can be reproduced by PWT in combination with the present IP-processing system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146420
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  • 5
    Electronic Resource
    Electronic Resource
    A new technique for time-resolved x-ray diffraction measurements in the single-bunch operation applied to laser annealing : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1419-1421 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We propose a new technique that is applicable to the time-resolved measurement of deformation on silicon surface during pulsed laser annealing in the single-bunch operation of the Photon Factory. There is a distribution of delay times between the activation of external trigger and the laser firing (the jitters) in the external trigger operation of laser equipment. This time distribution clearly makes the time-resolved measurement inaccurate. To overcome this disadvantage, a time-resolved measurement system that utilizes this time distribution has been developed. This system was composed of two TACs. The time distribution of the bunch (event number) and the time distribution of the intensity of the x rays diffracted from the silicon surface were measured. The respective signals were then accumulated in MCA1 and MCA2. The time course of the diffraction intensity before and after the laser irradiation was obtained by normalizing the time distribution of the intensity of the diffracted x rays with the time distribution of the event number. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145927
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  • 6
    Electronic Resource
    Electronic Resource
    Imaging-plate plane-wave x-ray topography of local lattice distribution due to growth striations in silicon crystals (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2980-2982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A newly developed imaging-plate plane-wave x-ray topography (IPPWT) method has been successfully applied to the quantitative analysis of local lattice distortion due to growth striations in magnetic-field-applied Czochralski silicon single crystals. IPPWT was found to possess sufficient spatial resolution to accurately measure variations of growth-induced local lattice distortions (Δd/d and Δα). The advantageous features of IPPWT, in comparison with conventional photographic-plate plane-wave x-ray topography, are a wide latitude in x-ray exposure conditions, better x-ray intensity linearity for performing quantitative analysis, and convenience in image processing and data handling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109163
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  • 7
    Electronic Resource
    Electronic Resource
    Refinement of time-resolved x-ray measurement system for studying the lattice deformation of silicon under pulsed Nd:YAG laser irradiation : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1164-1167 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The time-resolved x-ray measurement system using the TAC technique and the MCS technique has been improved after the previous SRI conference. The improved TAC technique enables us to measure a time-resolved x-ray diffraction intensity distribution across a laser spot at any time after laser flashing with a time resolution of 25 ns under the multibunch operation of synchrotron radiation sources. Optical fiber delay units are developed for the MCS technique instead of ECL delay units to obtain long delay time for detective signals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143123
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  • 8
    Electronic Resource
    Electronic Resource
    Silicon atom migration along grain boundaries in electron-beam-annealed silicon-on-insulator islands (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3579-3584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed very rapid migration of silicon atoms along the grain boundaries of electron-beam-annealed polycrystalline silicon film in a silicon-on-insulator (SOI) island structure with a capped layer consisting of Si3N4 and SiO2 films. A considerable amount of mass transport was observed in the SOI structure at a temperature high enough to melt grain boundaries but not high enough to melt the entire polycrystalline silicon film. Our results support the notion that electromigration of Si+4 ions in molten silicon at the grain boundaries is responsible for the rapid migration of silicon atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344062
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  • 9
    Electronic Resource
    Electronic Resource
    Elimination of extrinsic components overlapping lattice distortion variations of a silicon single crystal obtained by double-crystal X-ray topography (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 226-233 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Variations in lattice plane spacing and lattice plane orientation, i.e. Δd/d and Δα, reflect variations in lattice distortion in a single crystal. Double-crystal X-ray topography (DCT) using synchrotron radiation can be used to measure Δd/d and Δα of a silicon single crystal. However, both Δd/d and Δα measured using DCT are always overlapped by extrinsic components, showing particular long-range variations. The extrinsic components should be eliminated from the measured Δd/d and Δα for quantitative characterization of silicon single crystals. A sample-rotation and area-detector-traverse (RT) method, applicable to X-ray optics for DCT, has been newly developed. The extrinsic components are eliminated by modification of the intensity distribution on the X-ray topographs using the RT method. From theoretical considerations, it is confirmed that the extrinsic components are mainly due to the (+,−) non-parallel setting between the monochromator and the collimator, and a minute bend in the sample due to its physical restraint.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889899015484
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray study of small dislocation loops in thermally oxidized silicon (1972)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 5 (1972), S. 281-285 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Lattice defects in thermally oxidized silicon waters have been investigated by X-ray transmission topography. Many dotted lattice defect images were observed in the X-ray topographs. From observation of the variation in the image contrast between reflecting planes, it was found that these defects have a principal displacement along one of the 〈111〉 directions and another small displacement component perpendicular to this direction. The surfaces of the specimens were chemically etched in Sirtl solution after X-ray topography. Etch hillocks were found to be loops and half loops in the optical micrographs. One-to-one correspondence was found to exist between the etch hillocks and the X-ray images of defects. It was concluded that the defects are small dislocation loops and half loops lying on one of {111} planes and having a Burgers vector a/3 〈111〉 normal to the plane. The shapes and the contrasts of Observed X-ray images were well explained by the displacement around a partial dislocation of edge type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889872009513
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