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  • 1
    Electronic Resource
    Electronic Resource
    Impurity photovoltaic effect in indium-doped silicon solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4030-4036 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity photovoltaic effect is investigated in two groups of indium-doped single-crystalline silicon solar cells with n-type and p-type dopants in the base layer. The continuity equation for minority carriers is solved numerically using the charge neutrality condition and current–voltage characteristics are found. It is shown that the improvement of short-circuit current due to carrier photogeneration from the deep defect level is negligible for both groups of the cells considered. Short-circuit current increases with increasing the trap concentration and open-circuit voltage abruptly decreases for trap concentrations close to compensation by n-type dopant. However, these dependencies occur due to the increase of lifetime, the decrease of the total equilibrium carrier density, and take place even in the absence of the absorption of subgap photons. It is shown that indium is not the proper impurity for efficiency improvements of silicon solar cells due to the impurity photovoltaic effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354651
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanisms for the anomalous dependence of carrier lifetime on injection level and photoconductance on light intensity (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 332-335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments indicated an anomalous dependence of carrier lifetime on injection level and of photoconductance on carrier photogeneration rate. In this work mechanisms for these phenomena are proposed which are based on the effects of anomalous increase of carrier lifetime and filling of the defect level by minority carriers, respectively. Distinct from previously known mechanisms, which considered two types of deep defects, traps and recombination centers, our mechanism may take place in semiconductors containing only one type of deep defect, which is a recombination center. It was shown that the anomalous injection-level dependence of lifetime occurs only when the semiconductor is exactly compensated by recombination centers. This conclusion differs from that of the previous model, which concluded that carrier trapping is responsible for the earlier phenomenon. It is shown that the injection-level dependence of carrier lifetime can be used as an experimental tool to determine the deep defect concentration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330768
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  • 3
    Electronic Resource
    Electronic Resource
    Exciton-stimulated modulation of recombination in solar cells (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5807-5810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports an investigation of the effect of excitons on carrier recombination and solar energy conversion processes. The probabilities of exciton-stimulated modulation of the occupancy of r centers in CdS as well as the binding coefficient of free electrons and holes into excitons are estimated. Carrier recombination and transport theories are presented. The theories are applied to Cu2S/CdS solar cells for AM1 illumination at a temperature of 300 K. It has been shown by numerical estimation that exciton-stimulated modulation of the occupancy of deep impurities does give a significant reduction of carrier recombination losses and efficiency improvements for Cu2S/CdS solar cells. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366448
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of radiation-induced defects on silicon solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3941-3947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments indicated an anomalous degradation of n+–p–p+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels Ec−0.17, Ec−0.1, Ec−0.43, and Ev+0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level Ec−0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290453
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of excitons on CdTe solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8786-8792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥1015 cm−3. From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373611
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous degradation of solar cells induced by carrier trapping (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3836-3838 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanism for the effect of anomalous increase of carrier lifetime and the phenomenon of anomalous degradation of solar cells has been proposed. Distinct from previously known mechanisms, based on carrier recombination, the mechanism is based on carrier trapping. It is shown that the increase of carrier lifetime and short-circuit current with increasing trap concentration is caused by the abrupt decrease of total free carrier density due to carrier trapping. Then the Fermi level will be shifted towards the middle of the band gap and the open-circuit voltage decreases. It is shown that the anomalous increase of the short-circuit current can overcome the decrease of the open-circuit voltage, resulting in the increase of the cell efficiency. However, the efficiency improvement is not the result of carrier photoemission from the defect level, but is caused by the trap-induced increase of carrier lifetime. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379362
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism for the anomalous degradation of silicon space solar cells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a mechanism to explain the anomalous degradation of n+-p-p+ silicon space solar cells. Distinct from previously known mechanisms, it has been shown that the anomalous increase and abrupt decrease of short-circuit current are caused by corresponding changes of the minority carrier lifetime and a conversion of conductivity type. The majority carrier density decreases abruptly due to trapping by the radiation-induced deep donors, which results in an increase of carrier lifetime and resistance, conversion of conductivity type, and anomalous change of solar cell performance. Peak values of the carrier lifetime and short-circuit current decrease with increasing illumination intensity and are sensitive to variations of the weak optical illumination. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126445
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  • 8
    Electronic Resource
    Electronic Resource
    Quenching of photoconduction in semiconductors with pulsating recombination activity (1998)
    Springer
    Technical physics letters 24 (1998), S. 398-399 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new mechanism is proposed for the quenching of photoconduction and a negative internal photoeffect caused by the metastable nature of defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262105
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  • 9
    Electronic Resource
    Electronic Resource
    Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors (2000)
    Springer
    Technical physics letters 26 (2000), S. 187-189 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262787
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of semiconductors with pair defects (2000)
    Springer
    Semiconductors 34 (2000), S. 880-885 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Electrical properties of semiconductors with pair defects were investigated. It was demonstrated that the electron lifetime, resistivity, and Hall factor exhibit a pronounced nonmonotonic dependence on the pair defect concentration. A mechanism relating this phenomenon to a precise compensation of the semiconductor is suggested. It is shown that an abrupt drop of the total electron and hole density occurs in this case and the semiconductor becomes sensitive to external effects such as weak illumination intensity in the regions of the impurity and band-to-band absorption, temperature, etc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188092
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