ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The possibility of using the results of measuring the quasi-static current-voltage characteristics and high-frequency impedance of symmetrically doped bicrystal structures obtained by direct bonding to simultaneously determine the electrical parameters of the bonding interface [differential density of the surface states ν(E)] and the near-boundary layers (the dopant-concentration distribution in the vicinity of the boundary) is discussed. Attention is given to the fact that the ratio of static current to high-frequency conductivity is extremely sensitive to the presence of “punch-throughs” (regions with enhanced electrical conductivity) in the potential barrier of the bonding interface. It is shown experimentally that the electrical conductivity of actual bicrystal structures obtained by direct bonding of silicon is governed to a large extent by the presence of such “punch-throughs,” which should be taken into account, in addition to the possible doping of interfacial layers in the course of bonding, when determining the dependence ν(E).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1317577
Permalink