ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A theoretical description of photochemical transformations occurring in the films of chalcogenide vitreous semiconductors (in particular, AsSe) is proposed. Results obtained in studying the photodarkening of thin films of chalcogenide vitreous semiconductors exposed to pulsed radiation of an ArF excimer laser (193 nm) are analyzed. The photochemical transformation is characterized by optical sensitivity on the order of 3 cm3 kJ−1 and a threshold light intensity of ∼17 kJ cm−2 s−1.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188082
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