ALBERT

Description: In this paper, we report a spectroscopic study of natural type Ib-IaA diamonds containing Y centers subjected to high-pressure high-temperature treatment at 7–7.5 GPa and 1700–2200 °C. Diamond samples showing the Y centers as the dominant absorption feature in the infrared spectra were selected from a collection of natural diamonds from alluvial placers of the northeastern Siberian Platform. The samples were investigated by spectroscopic techniques before and after each annealing stage. It was found that upon annealing at temperatures higher than 2000°C, the defect-induced one-phonon spectra changed from the Y centers to a new form with a characteristic band peaking at 1060 cm−1. Photoluminescence spectra of the samples were modified after each annealing stage starting from 1700 °C. The most significant changes in photoluminescence occurred at temperatures higher than 2000 °C and were associated with a sharp increase of the intensity of an emission band peaking at about 690 nm. A comparison with natural red-luminescing diamonds from Yakutian kimberlite pipes was performed. It was concluded that the observed 1060 cm−1 IR band and the 690 nm red emission band are genetically related to the Y centers and that defects or impurities responsible for the Y centers appear quite widespread in natural diamonds from various deposits worldwide.

Description: For this study, 21 samples of colorless octahedral diamonds (weighing 5.4–55.0 mg) from the Mir pipe (Yakutia) were investigated with photoluminescence (PL), infrared (IR), and electron paramagnetic resonance (EPR) spectroscopies. Based on the IR data, three groups of diamonds belonging to types IIa, IaAB, and IaB were selected and their spectroscopic features were analyzed in detail. The three categories of stones exhibited different characteristic PL systems. The type IaB diamonds demonstrated dominating nitrogen–nickel complexes S2, S3, and 523 nm, while they were less intensive or even absent in the type IaAB crystals. The type IIa diamonds showed a double peak at 417.4+418.7 nm (the 418 center in this study), which is assumed to be a nickel–boron defect. In the crystals analyzed, no matter which type, 490.7, 563.5, 613, and 676.3 nm systems of various intensity could be detected; moreover, N3, H3, and H4 centers were very common. The step-by-step annealing experiments were performed in the temperature range of 600–1700 °C. The treatment at 600 °C resulted in the 563.5 nm system’s disappearance; the interstitial carbon vacancy annihilation could be considered as a reason. The 676.5 nm and 613 nm defects annealed out at 1500 °C and 1700 °C, respectively. Furthermore, as a result of annealing at 1500 °C, the 558.5 and 576 nm centers characteristic of superdeep diamonds from São Luis (Brazil) appeared. These transformations could be explained by nitrogen diffusion or interaction with the dislocations and/or vacancies produced.