ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The optical orientation of electron spins in heavily doped, strained GaAs/GaAsP layers with a deformation-split valence band is studied experimentally. The observed polarized luminescence spectra and polarized photoemission (electron emission) spectra are shown to be described well by a model which allows for smearing of the edges of the bands by the fluctuation potential due to impurities, degeneracy of the carriers at low temperatures, and indirect electron-phonon optical transitions. The dominant mechanism of electron spin relaxation in strained layers is found to be the Bir-Aronov-Pikus mechanism. The parameters of the fluctuation potential and the parameters governing carrier spin relaxation are determined.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187845
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