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  • 1
    Electronic Resource
    Electronic Resource
    Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1051-1053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of photoconductance in electron-irradiated semi-insulating GaAs grown by the magnetic-applied liquid-encapsulated Czochralski technique is studied in terms of the electron-irradiation-induced defects. A decrease in photoconductance for samples annealed at 350 °C is attributed to the interband transition of the photoexcited electrons within the electron-irradiation-induced defect observed at around 0.98 eV using infrared absorption spectroscopy. The recovery of the photoconductance for samples annealed above 400 °C is enhanced by the annihilation of the 0.98-eV defect, accompanied by the photoquenching of the photoconductance below 140 K. An unquenchable component in photoconductance appeared by an annealing above 600 °C is proposed to be a VAs-CAs complex by photoluminescence measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349693
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  • 2
    Electronic Resource
    Electronic Resource
    Voltage shift phenomena in a heteroepitaxial BaTiO3 thin film capacitor (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 323-330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage shift phenomena of the hysteresis loop were characterized for a c-axis oriented heteroepitaxial BaTiO3 film by means of switching current measurements using various types of pulse sequences. During application of voltage, the hysteresis loop gradually shifted along the voltage axis according to the polarity of the voltage. Even after the application of voltage, while the top and bottom electrodes were short-circuited, the hysteresis loop continued to move. Under certain conditions, a part of the hysteresis loop shifted back, whereas the rest shifted forward. These results were explained, assuming that there is a nonswitching layer between the ferroelectric layer and the bottom electrode, and that the discontinuity of polarization can be compensated by injection of negative charges from the electrode. It was suggested that the nonswitching layer is possibly formed by relaxation of lattice misfit strain in the heteroepitaxial ferroelectric thin film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426249
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Cell Density on Thermotaxis of Paramecium (1981)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 28 (1981), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: . The swiftness of thermotaxis of Paramecium caudatum has been investigated for various populations of organisms by measuring the transient spatial distribution of the gathering process of organisms that are transferred to a temperature-gradient cell from the culture medium. The dispersion obtained from the spatial distribution for each population is found to decrease linearly with time and finally reach a steady state value. The gathering rate determined by the slope of the dispersion strongly depends on population; it increases with population.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1981.tb05321.x
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion Coefficient of Paramecium as a Function of Temperature (1981)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 28 (1981), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: The motion of Paramecium caudatum has been investigated at various temperatures by measuring the transient behavior of spatial distribution in the diffusion process of organisms that, by electric stimulus, are initially gathered at a single place in the glass culture cell. The spatial distribution through the course of diffusion has a nearly Gaussian profile. Dispersion was obtained at 1 sec intervals and increased linearly with time. The time dependence of the dispersion gave a diffusion coefficient for the random motion of the organisms. The results show that the diffusion coefficient has a maximum at the temperature at which the paramecia were cultivated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1981.tb02862.x
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  • 5
    Electronic Resource
    Electronic Resource
    γ-ray enhanced quenching phenomenon of photoconductance in undoped and In-doped semi-insulating GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In undoped and In-doped semi-insulating GaAs with various dislocation densities, we have found that the quenching phenomenon of photoconductance is enhanced by γ irradiation above 107 rad at room temperature. In particular, this effect is obvious for crystals with dislocation densities of 10–103/cm2. The new stage induced by γ irradiation is found around 100 K and disappears gradually by annealing above 300 °C. The time dependence of photoconductance suggests the existence of the newly introduced state assisting the transition from a normal midgap electron trap (EL20) to a metastable state (EL2*) in the semi-insulating materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100070
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1099-1103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 °C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (AsGa) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, AsGa≤1×1018 cm−3, consists of the coexistence of the hopping and band conductions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340014
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  • 7
    Electronic Resource
    Electronic Resource
    Depth uniformity of electrical properties and doping limitation in neutron-transmutation-doped semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3542-3544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth uniformity of electrical properties has been evaluated for neutron-transmutation-doped (NTD), semi-insulating GaAs irradiated with thermal neutrons of 1.5×1018 cm−2 by the van der Pauw method combined with iterative etching of the surface. In NTD-GaAs wafers (thickness ∼410 μm) annealed for 30 min at 700 °C, the depth profiles of the resistivity, the carrier concentration, and the Hall mobility show constant values of 1×10−2 Ω cm, 2.0×1017 cm−3, and 3100 cm2/V s, respectively, within an experimental error of 5%. In an annealing process, the redistribution and/or the segregation of NTD impurities is not observed. We also discuss the limitations of low-level NTD in semi-insulating GaAs. It is suggested that the activation of the NTD-impurities below ∼1×1016 cm−3 is mainly restricted by the presence of the midgap electron trap (EL2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345303
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of neutron-irradiated GaP crystals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3111-3114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption, electron paramagnetic resonance (EPR) spectra, and the electrical resistivity of semi-insulating liquid encapsulated Czochralski GaP crystals irradiated by fast neutrons with a dose of 7.6×1018 n cm−2 have been studied. The electrical resistivity decreases with irradiation from 106 Ω cm to 1.5 kΩ cm. The temperature dependence of resistivity at low temperature is fitted to exp(b/T1/4). The strong continuous optical absorption extends to 0.32 eV and its tail spreads until 0.12 eV. The EPR spectrum exhibits a broad singlet at 77 K and a doublet with five line structures at room temperature, which is attributed to antisite defects PGa. The strong infrared absorption begins to be annealed at 150 °C, and the EPR broad singlet decreases with anneals in the same temperature range. The strong infrared absorption is assumed to arise from interstitial phosphorus clusters. A discussion is given concerning the species responsible for the EPR singlet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345387
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  • 9
    Electronic Resource
    Electronic Resource
    Excitatory potential of artificial membrane in response to current pulse stimulation
    Amsterdam : Elsevier
    Biophysical Chemistry 36 (1990), S. 133-139 
    Details
    ISSN: 0301-4622
    Keywords: Artificial membrane ; Current stimulation ; Excitatory potential response
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0301-4622(90)85016-Y
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  • 10
    Electronic Resource
    Electronic Resource
    A short period oscillation in a water/oil/water system
    Amsterdam : Elsevier
    Biophysical Chemistry 40 (1991), S. 149-153 
    Details
    ISSN: 0301-4622
    Keywords: Potential oscillation ; Water/oil interface
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0301-4622(91)87003-N
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