Publication Date:
2016-01-12
Description:
Eu-doped GaN is a promising material with potential application not only in optoelectronics but also in magneto-optical and quantum optical devices “beyond the light emitting diode.” Its interesting spectroscopy is unfortunately complicated by spectral overlaps due to “site multiplicity,” the existence in a given sample of multiple composite centers in which Eu ions associate with intrinsic or extrinsic defects. We show here that elementary crystalfield analysis of the 5 D 0 to 7 F 1 transition can critically distinguish such sites. Hence, we find that the center involved in the hysteretic photochromic switching observed in GaN(Mg):Eu, proposed as the basis of a solid state qubit material, is not in fact Eu1, as previously reported, but a related defect, Eu1(Mg). Furthermore, the decomposition of the crystalfield distortions of Eu0, Eu1(Mg), and Eu1 into axial and non-axial components strongly suggests reasonable microscopic models for the defects themselves.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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