Publication Date:
2012-08-07
Description:
Author(s): K. Laßmann, B. P. Gorshunov, A. S. Prokhorov, E. S. Zhukova, P. S. Korolev, V. P. Kalinushkin, V. G. Plotnichenko, N. V. Abrosimov, P. G. Sennikov, H.-J. Pohl, and M. Dressel To investigate a possible host isotope effect on the local-mode-coupled low-energy two-dimensional motion of interstitial oxygen in silicon, we have measured the resonance parameters of the lowest transition of the 29 cm −1 band of the Si-O-Si complex in three samples of natural silicon ( nat Si) and i... [Phys. Rev. B 86, 075201] Published Mon Aug 06, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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