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  • 1
    Electronic Resource
    Electronic Resource
    A technique to improve the epitaxial growth of some fcc and bcc metals on rock salt (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 278-280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that by the deposition of a thin layer of LiF on rock-salt cleavage faces the epitaxial growth of Ag, Al, Cu, Cr, Fe, V, and Mo will be improved markedly. The simultaneous growth of the metals on air-cleaved rock-salt substrates and on air-cleaved rock-salt faces covered with a LiF interlayer before the metal deposition have been compared by transmission electron microscopy and x-ray rocking curves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336827
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  • 2
    Electronic Resource
    Electronic Resource
    Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1373-1375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Split-gate ballistic constrictions have been fabricated on InAs/AlSb quantum-well heterostructures. Sharp conductance steps of 2e2/h are observed at 4.2 K, while conductance plateaus persist up to 30 K. The sharp features and high temperature operation are made possible by the low effective mass (m*Γ= 0.023me) of InAs, and the closeness of the quantum well (20 nm) to the wafer surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108683
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  • 3
    Electronic Resource
    Electronic Resource
    Negative differential conductance in strained Si point contacts and wires (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1528-1530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of negative differential conductance (NDC) in simple nanostructure geometries fabricated on high-mobility Si/SiGe strained-layer heterostructures is reported. The NDC is observed in the drain characteristic of etch-defined "point contacts" with lithographic width and length of 0.22, and 0.12 μm, respectively. Current peak-to-valley ratios as large as 2.0 are observed at T=1.3 K. The NDC is also observed in "wire" geometries as long as 19 μm, and can persist to temperatures as high as 83 K, with a minimum in the differential conductance observable at 103 K. The NDC in long wires is accompanied by the formation of a high-field domain at the drain end of the wire. The effect is only observed in laterally constricted geometries, but is not a result of quantum confinement or impurity-related trapping. We suggest that the NDC and the attendant domain formation are caused by phonon emission by hot electrons within the constricted geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119956
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  • 4
    Electronic Resource
    Electronic Resource
    Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2422-2424 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of a laterally patterned negative differential conductance (NDC) device based on hot-electron effects in strained Si quantum wells is demonstrated. The device consists of a small, etch-defined dot region connected to narrow leads on either side via point-contact tunnel barriers. The entire device is fabricated on a high-mobility Si/Si1−xGex heterostructure wafer using electron-beam lithography and low-damage reactive-ion etching. At T=0.4 K (T=1.3 K), the drain characteristic of this device shows a pronounced NDC region with a peak-to-valley ratio (PVR) greater than 600 (100). The PVR is reduced with increasing temperature, with remnants of the NDC observable to 30 K. The NDC is attributed to phonon emission by hot electrons injected into the dot region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118891
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2148-2150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405151
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  • 6
    Electronic Resource
    Electronic Resource
    SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1267-1269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm2/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342212
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  • 7
    Electronic Resource
    Electronic Resource
    Principal component analysis of near infrared spectra of whole and ground oilseed rape ( Brassica napus L.) samples
    Amsterdam : Elsevier
    Chemometrics and Intelligent Laboratory Systems 3 (1988), S. 233-242 
    Details
    ISSN: 0169-7439
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-7439(88)80053-4
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  • 8
    Electronic Resource
    Electronic Resource
    Regulation of photosynthetic electron transport and photophosphorylation in intact chloroplasts and leaves of Spinacia oleracea L. (1978)
    Springer
    Planta 143 (1978), S. 41-49 
    Details
    ISSN: 1432-2048
    Keywords: Cyclic photophosphorylation ; Electron transport ; Light scattering ; Photosystem I/II ; Regulation of electron flow
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Oxygen ist reduced by the electron transport chain of chloroplasts during CO2 reduction. The rate of electron flow to oxygen is low. Since antimycin A inhibited CO2-dependent oxygen evolution, it is concluded that cyclic photophosphorylation contributes ATP to photosynthesis in chloroplasts which cannot satisfy the ATP requirement of CO2 reduction by electron flow to NADP and to oxygen. Inhibition of photosynthesis by antimycin A was more significant at high than at low light intensities suggesting that cyclic photophosphorylation contributes to photosynthesis particularly at high intensities. Cyclic electron flow in intact chloroplasts is under the control of electron acceptors. At low light intensities or under far-red illumination it is decreased by substrates which accept electrons from photosystem I such as oxaloacetate, nitrite or oxygen. Obviously, the cyclic electron transport pathway is sensitive to electron drainage. In the absence of electron acceptors, cyclic electron flow is supported by far-red illumination and inhibited by red light. The inhibition by light exciting photosystem II demonstrated that the cyclic electron transport pathway is accessible to electrons from photosystem II. Inhibition can be relieved by oxygen which appears to prevent over-reduction of electron carriers of the cyclic pathway and thus has an important regulatory function. The data show that cyclic electron transport is under delicate redox control. Inhibition is caused both by excessive oxidation and by over-reduction of electron carriers of the pathway.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00389050
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  • 9
    Electronic Resource
    Electronic Resource
    Photoinhibition of photosynthesis under anaerobic conditions studied with leaves and chloroplasts of Spinacia oleracea L. (1985)
    Springer
    Planta 165 (1985), S. 430-438 
    Details
    ISSN: 1432-2048
    Keywords: Anaerobiosis ; Chlorophyll a fluorescence ; Photoinhibition ; Photosynthesis (CO2 assimilation, electron transport) ; Spinacia (photoinhibition) ; Thylakoids, isolated
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The role of oxygen in the photoinactivation of the photosynthetic apparatus of Spinacia oleracea L. was investigated. Moderate irradiation (1200 μmol photons m-2s-1) of spinach leaves in an atmosphere of pure nitrogen caused strong inhibition of subsequently measured net CO2 assimilation, whereas considerably less photoinhibition was observed in the presence of low partial pressures (10–20 mbar) of O2. The decrease in activity caused by anaerobiosis in the light was not based on stomatal closure; the decline of assimilation represents a photoinhibition, as activity was not impaired by low irradiation (80 μmol photos m-2s-1). In contrast, gassing with pure N2 in the dark caused strong inhibition. Electron-transport rates and chlorophyll-fluorescence data of thylakoids isolated from photoinhibited leaves indicated damage to the electron-transport system, in particular to photosystem II reaction centers. In vitro, photoinhibition in isolated thylakoid membranes was also strongly promoted by anaerobiosis. Photoinhibition of electron-transport rates under anaerobic conditions was characterized by a pronounced increase in the initial fluorescence level, F0, of chlorophyll-fluorescence induction, in contrast to photoinhibition under aerobic conditions. The results are discussed in terms of two mechanisms of photoinhibition, one that is suppressed and a second that is promoted by oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00392242
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of GSH from primary tumors and its role in in vitro chemosensitivities (1991)
    Springer
    Investigational new drugs 9 (1991), S. 327-328 
    Details
    ISSN: 1573-0646
    Keywords: glutathione (GSH) ; Human Tumor Clonogenic Assay (HTCA) ; chemosensitivity ; primary tumor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00183573
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