ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz,delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, arenormally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measureddevices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To ourknowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiCMOSFETs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1277.pdf
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