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  • 1
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    Seawater carbonate chemistry and growth and survival of native and commercial oysters (2020)
    PANGAEA
    Details
    Publication Date: 2024-03-15
    Description: The effects of climate change, including ocean acidification and ocean heatwaves, on biological communities in estuaries are often uncertain. Part of the uncertainty is due to the complex suite of environmental factors in addition to acidification and warming that influence the growth of shells and skeletons of many estuarine organisms. The goal of this study was to document spatial and temporal variation in water column properties and to measure the in situ effects on larval and recently settled stages of ecologically important Olympia oysters (Ostrea lurida) and commercially important Pacific oysters (Crassostrea gigas) in a low‐inflow estuary with a Mediterranean climate in Northern California. Our results reveal that seasonal inputs of upwelled or riverine water create important and predictable gradients of carbonate system parameters, temperature, salinity, dissolved oxygen (DO), and other variables that influence oyster performance, and that the influence of these gradients is contingent upon the location in the estuary as well as seasonal timing. During upwelling events (dry season), temperature, carbonate chemistry, and DO had the greatest impact on oyster performance. During runoff events (wet season), gradients in salinity, nutrient concentrations, and total alkalinity driven by river discharge were comparatively more important. These results suggest that the spatial importance of carbonate chemistry and temperature are seasonally variable and are two of several other factors that determine oyster performance. We use these results to discuss future impacts on oysters given projected regional changes in the frequency and magnitude of upwelling and precipitation‐driven runoff events.
    Keywords: Alkalinity, borate; Alkalinity, phosphate; Alkalinity, silicate; Alkalinity, total; Ammonium; Animalia; Aragonite saturation state; Area; Batch; Benthic animals; Benthos; Bicarbonate ion; Brackish waters; Calcite saturation state; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbonate ion; Carbonate system computation flag; Carbon dioxide; Chlorophyll a; Comment; Crassostrea gigas; Date; Depth, description; Estuary; EXP; Experiment; Field experiment; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Growth, relative; Growth, relative, standard deviation; Growth, relative, standard error; Growth/Morphology; Hydroxide ion; Identification; Individuals; Length; Mollusca; Month; Mortality/Survival; Name; Nitrate and Nitrite; Nitrite; North Pacific; Number; OA-ICC; Ocean Acidification International Coordination Centre; Ostrea lurida; Oxygen, dissolved; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); pH; Phosphate; Proportion of survival; Registration number of species; Revelle factor; Salinity; Sample ID; Sampling date; Season; Silicate; Single species; Species; Station label; Temperate; Temperature, water; Time in days; Tomales_Bay; Type; Uniform resource locator/link to reference; Upwelling; Width
    Type: Dataset
    Format: text/tab-separated-values, 54225 data points
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  • 2
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    Seawater carbonate chemistry and reproductive success of giant kelp (Macrocystis pyrifera) (2020)
    PANGAEA
    Details
    Publication Date: 2024-03-15
    Description: Understanding how climate change may influence ecosystems depends substantially on its effects on foundation species, such as the ecologically important giant kelp (Macrocystis pyrifera). Despite its broad distribution along strong temperature and pH gradients and strong barriers to dispersal, the potential for local adaptation to climate change variables among kelp populations remains poorly understood. We assessed this potential by exposing giant kelp early life stages from genetically disparate populations in Chile and California to current and projected temperature and pH levels in common garden experiments. We observed high resistance at the haploid life stage to elevated temperatures with developmental failure appearing at the egg and sporophyte production stages among Chilean and high-latitude California populations, suggesting a greater vulnerability to climate- or ENSO-driven warming events. Additionally, populations that experience low pH events via strong upwelling, internal waves, or estuarine processes, produced more eggs per female under experimental low-pH conditions, which could increase fertilization success. These results enhance our ability to predict population extinctions and ecosystem range shifts under projected declines in ocean pH and increases in ocean temperature.
    Keywords: Alkalinity, total; Aragonite saturation state; Benthos; Bicarbonate ion; Bottles or small containers/Aquaria (〈20 L); Calcite saturation state; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbonate ion; Carbonate system computation flag; Carbon dioxide; Chromista; Coast and continental shelf; Date; Eggs; Event label; EXP; Experiment; Female; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Hemisphere; Laboratory experiment; Las_Cruces_OA; Las_Docas; Location; Macroalgae; Macrocystis pyrifera; Male; Mendocino; Monterey_Bay_OA; Name; North Pacific; Number; OA-ICC; Ocean Acidification International Coordination Centre; Ochrophyta; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); pH; Punta_Lavapie_OA; Quinchao; Registration number of species; Replicate; Reproduction; Salinity; San_Diego_OA; Single species; South Pacific; Species; Spores; Temperate; Temperature; Temperature, water; Time in weeks; Treatment; Type; Uniform resource locator/link to reference
    Type: Dataset
    Format: text/tab-separated-values, 202924 data points
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    DATA PANGAEA
  • 3
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    Seawater carbonate chemistry and reproductive success of bull kelp (Nereocystis luetkeana, Phaeophyceae, Laminariales) (2023)
    PANGAEA
    Details
    Publication Date: 2024-03-15
    Description: To determine the effects of changing temperatures and carbonate levels on Northern California's bull kelp populations, we collected sporophylls from mature bull kelp individuals in Point Arena, CA. At the Bodega Marine Laboratory, we released spores from field-collected bull kelp, and cultured microscopic gametophytes in a common garden experiment with a fully factorial design crossing modern conditions (11.63 ± 0.54°C and pH 7.93 ± 0.26) with observed extreme climate conditions (15.56 ± 0.83°C and 7.64 ± 0.32 pH). In order to allow full comparability with other ocean acidification data sets, the R package seacarb (Gattuso et al, 2022) was used to compute a complete and consistent set of carbonate system variables, as described by Nisumaa et al. (2010). In this dataset the original values were archived in addition with the recalculated parameters (see related PI). The date of carbonate chemistry calculation by seacarb is 2023-09-06.
    Keywords: Alkalinity, total; Aragonite saturation state; Benthos; Bicarbonate ion; Calcite saturation state; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbonate ion; Carbonate system computation flag; Carbon dioxide; Chromista; Coast and continental shelf; Comment; Date; File name; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Growth/Morphology; Incubation duration; Laboratory experiment; Macroalgae; Measured using software ImageJ; Nereocystis luetkeana; North Pacific; Number; OA-ICC; Ocean Acidification International Coordination Centre; Ochrophyta; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); pH; Point_Arena_OA; Replicate; Reproduction; Salinity; Single species; Size; Species; Temperate; Temperature; Temperature, water; Treatment; Type; Type of study
    Type: Dataset
    Format: text/tab-separated-values, 98412 data points
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    DATA PANGAEA
  • 4
    Electronic Resource
    Electronic Resource
    Surface polygonization on GaAs wafers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1468-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polygonized surface structure produced by furnace annealing GaAs wafers was studied by optical and scanning electron microscopy. The surface structure was revealed by chemically etching wafers which had been implanted with silicon and subjected to a furnace annealing cycle. Cathodoluminescence micrographs demonstrate an absence of impurity segregation to the polygon boundaries. No correlation was found between growth-induced dislocations and the polygonal networks. It is proposed that the surface structure results from a vacancy-condensation process. Related surface effects were observed for rapidly annealed wafers. A correlation between the furnace annealed and rapidly annealed GaAs is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341819
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanisms of interdiffusion in copper/nickel thin-film couples (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1147-1155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of interdiffusion in copper/nickel thin-film couples have been investigated in the temperature interval 573–777 K by in situ measurement of contact resistance, Auger depth profiling (ADP), and transmission electron microscopy. Correlation between evolution of contact resistance and measured Auger concentration profiles has been established and mechanisms incorporating rapid grain boundary diffusion, followed by defect-assisted diffusion into grain interiors (Type B kinetics), are proposed to explain the accelerated reactions observed. A modified Whipple model and two independent methods, based on ADP and contact resistance measurements, are used to calculate grain boundary and intragranular diffusion coefficients, respectively. The calculated grain boundary diffusion coefficient is (0.82 cm2/s) exp(−1.48eV/kT) for nickel in copper, and approximately 4×10−13 cm2/s for copper in nickel at 673 K. An average intragranular diffusion coefficient for nickel in copper is determined to be (2.6×10−6 cm2/s) exp(−1.38 eV/kT) by both methods, whereas ADP data yield a corresponding value of (5.2×10−8 cm2/s) exp(−1.51eV/kT) for copper in nickel. It is concluded that characterization of chemical composition and microstructure, combined with in situ measurement of concomitant electrical properties, provides a reliable description of interdiffusion mechanisms in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336552
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  • 6
    Electronic Resource
    Electronic Resource
    An analysis of dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of 〈111〉 InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4383-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excessive impurity additions have been widely used to suppress dislocation generation in the liquid-encapsulated Czochralski (LEC) growth of InP. We have analyzed this approach by means of the quasi-steady-state heat transfer/thermal stress model. A strong motivation for the investigation was provided by the recent measurement of the critical resolved shear stress σCRS of InP as a function of temperature in the range 748–948 °K for several Ge and S concentrations. The experimental data were analyzed by the method of least squares via the usually accepted logarithmic dependence of σCRS on reciprocal temperature. The extrapolated values of σCRS exhibit a monotonic increase with impurity addition at temperatures near the melting point. Introducing the σCRS and realistic estimates of other physical properties (thermal diffusivity, thermal expansion coefficient, elastic constants, etc.) in the thermal stress model, the dislocation distribution pattern in a {111} substrate cut from a 〈111〉 boule was constructed. This necessitated a suitable recasting of the formalism that was previously applicable only to the {100} orientation. The computed dislocation contour maps on {111} wafers display sixfold symmetry resembling the "Star of David,'' in overall agreement with etch-pit patterns. InP crystals 2.5 cm in diameter grown in a standard high ambient temperature gradient but containing a large amount of Ge ((approximately-equal-to)1019 cm−3) are predicted and observed to be dislocation-free. On the other hand, in nominally undoped material a large density of defects is forecast, especially at the periphery, in line with the etchpit configuration. Intermediate doping levels (∼1017 cm−3 Ge, ∼1018 cm−3 S) reduce the density in the core but leave the outer edge essentially unaltered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335528
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  • 7
    Electronic Resource
    Electronic Resource
    Quasi-steady-state heat transfer/thermal stress model for dislocation generation in the vertical gradient freeze growth of GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4016-4022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have formulated a tractable model of the vertical gradient freeze (VGF) process for GaAs, providing dislocation density contour lines in terms of geometrical and physical parameters. First, the temperature distribution in a cylindrical boule has been determined in closed form involving modified Bessel functions of the first kind, order zero (I0) by solving the quasi-steady-state partial differential equation for heat conduction. Subsequently, the principal thermoelastic stress components have been evaluated and then resolved in the {111}, 〈11¯0(approximately-greater-than) slip system which in excess of the critical resolved shear stress (CRSS) introduce dislocations by slip. We present dislocation density contour maps for 2- and 3-in.-diam undoped (100) GaAs grown by VGF under a variety of linear thermal gradients (v) imposed on the periphery of the boule. We show that for large v the dislocation distribution is similar to that observed in liquid-encapsulated Czochralski (LEC) material but lowering v effectively suppresses dislocation generation even in boules larger than 2 in. in diameter. A comparison of dislocation generation in VGF and standard LEC growth using very recent CRSS data is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352868
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  • 8
    Electronic Resource
    Electronic Resource
    A comparison of reducing the dislocation densities in GaAs grown by the vertical gradient freeze and liquid-encapsulated Czochralski techniques (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 477-479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have recently applied the quasi-steady state heat transfer/thermal stress model for dislocation generation to the vertical gradient freeze (VGF) process for GaAs, permitting a direct comparison with the original treatment of liquid-encapsulated Czochralski (LEC) growth. Very recent high temperature critical resolved shear stress (CRSS) data on undoped VGF and In-doped LEC specimens were used. We show that the ∼threefold increase in CRSS with In is sufficient to inhibit defect formation in the central ∼75% of 3 in. diameter LEC wafers grown in a high ambient temperature gradient, duplicating the etch-pit density (EPD) data. Undoped VGF wafers are predicted to be nearly dislocation-free. The theoretical results on 3 in. material track the low EPD counts in both the 〈100〉 and 〈110〉 directions in a 5 K/cm gradient imposed on the crystals' surface. We also discuss the origin of dislocations in regions free of thermal stresses and propose their suppression by the addition of a small amount of In in VGF experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353825
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon-doping level dependent diffusion of Be in AlGaAs/GaAs quantum well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4648-4654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated Be diffusion during molecular beam epitaxial growth of GaAs/AlGaAs graded index separate confinement heterostructure laser structures using secondary ion mass spectrometry (SIMS). For growth at 700 °C we find that Be from the p-type AlGaAs cladding layer diffuses into the quantum well and beyond. As a result, the p-n junction is displaced from the heterojunction. The extent of Be diffusion is found to depend on the dopants in the graded index (GRIN) regions adjoining the GaAs active layer. When the GRIN segments are left intentionally undoped, Be diffuses through the entire p-side GRIN, the quantum well active and a significant portion of the n-side GRIN. However, when the GRIN regions are doped, respectively, with Be and Si on the p and n sides, the displacement of the p-n junction caused by Be diffusion is significantly reduced. Assuming that Be diffuses from a constant source at the surface into a n-type layer as a singly charged interstitial donor, our analysis predicts that increasing the doping of the n layer retards the diffusion of Be while that of the p layer enhances it. Further, including the electric field of the p-n junction in the model leads to peaks and inflections resembling those observed in the experimental SIMS profiles. In view of Be-related oxygen contamination and Be diffusion on the p-side GRIN region, Be should be dispensed with on the p side, however, Si addition on the n side is beneficial as it minimizes Be diffusion and p-n junction displacement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352120
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis and characterization of mononuclear and dinuclear bis(2,2'-bipyridine)ruthenium(II) complexes containing sulfur-donor ligands (1989)
    s.l. : American Chemical Society
    Inorganic chemistry 28 (1989), S. 912-920 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00304a023
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