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  • 1
    Electronic Resource
    Electronic Resource
    Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2605-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for the direct determination of majority thermal-capture cross sections and concentration of deep levels in p-n junctions is proposed. The combined use of a capacitance technique and a numerical simulation (which reproduces the experimental details) provides accurate results through the fitting of experimental and numerical capture transients. The sensitivity of the method to these electrical magnitudes is also shown. This procedure is applicable not only to abrupt p+-n junctions, which have been quite thoroughly analyzed, but also to samples where a nonabrupt shallow-dopant profile together with a high concentration of deep levels makes them respond to a capture pulse in ways not reported until now. This method was used to analyze the two levels of platinum in silicon in nonabrupt p+-n junctions with a platinum concentration comparable to that of the shallow dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354673
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3712-3720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler–Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349222
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  • 3
    Electronic Resource
    Electronic Resource
    Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4946-4953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A real (nonabrupt) p-n junction has been theoretically analyzed. It consists of a graded profile of shallow dopant atoms and a uniform profile of deep impurities, their relative concentrations varying along the structure (i.e., there are regions where deep impurity concentration is highest and others where dopant concentration dominates). This type of structure was excited by majority-carrier pulses, which allowed us to describe and explain new components in the charge distribution through the junction. The change in the interpretation of results from the application of capacitance techniques to these samples is quite remarkable. The validity of the theory is verified by comparison with experimental results obtained for silicon p-n junctions highly doped with platinum. The detailed analysis of the electrical model of a gradual junction with two deep levels, located in both halves of the band gap has allowed us to explain the following: (a) the disappearance of peaks in deep level transient spectroscopy (DLTS), (b) the existence of both positive and negative signals in a majority-DLTS spectrum, and (c) decreasing capacitance and voltage transients due to the emission of majority carriers or transients in which rising and falling sections are combined. The last two points cannot be explained by using the extended model of p+-n or n+-p junctions even if the deep-level concentration NT is assumed to be of the same order as the free carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352063
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  • 4
    Electronic Resource
    Electronic Resource
    Density of states of a two-dimensional electron gas including nonparabolicity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4267-4269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression for the density of states per unit area and unit of total energy in a two-dimensional electron gas is proposed. This density of states depends on the energy of the electrons in each subband and on the potential well function averaged in the subband by the envelope function. The resulting expression is shown to approach the density of states per unit area and unit energy, which is obtained by integrating the three-dimensional density in the potential well, in the limit of the high levels. This fact is then used for checking the validity of the expression, obtaining excellent results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355967
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  • 5
    Electronic Resource
    Electronic Resource
    A comprehensive model for Coulomb scattering in inversion layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 924-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356448
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  • 6
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5448-5453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multiphonon emission capture mechanism by neutral centers, in the presence of an electric field below 1 MV/cm, has been numerically simulated by the Monte Carlo method. Based on common models for the initial and final states, a simple expression of the process probability has been calculated considering both nonpolar and polar electron–phonon coupling. The validity range of this expression is assumed for a carrier energy Ek〈ET, where ET is the impurity level depth. In order to check the probability rate, this mechanism was included in the framework of a previous numerical procedure as one more mechanism for calculating the capture cross section as an electric-field function. This theoretical framework is given for both polar and nonpolar semiconductors. The Pt and Au acceptor levels in Si have been analyzed with the probability expression, particularized for the case of nonpolar coupling, by fitting the available experimental data of capture cross sections with the numerical results. In both cases, the values of the Huang–Rhys parameter have been confirmed with the experimental measurements and previous theoretical calculation without the applied field. According our calculations, the experimentally observed decrease of the cross sections at high fields is attributed to carrier heating. In the range of temperatures from 77 to 300 K, the dependence of the numerical capture cross sections appears as E−3/2 with a field between 5×104 V/cm and 1 MV/cm. The temperature dependence change of the numerical cross section at high electric field is also caused by electron heating. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359659
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  • 7
    Electronic Resource
    Electronic Resource
    Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1998-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main nonradiative capture mechanisms, cascade and multiphonon emission, have been numerically simulated by the Monte Carlo method. To do so, both mechanisms were included in the frame of a previous numerical procedure to which the nonacoustic-phonon contribution was also added. Different centers were studied. Capture by shallow donors (P, As, and Sb) in n-type silicon were interpreted considering only the cascade process. Capture by acceptors levels of platinum, gold, and titanium in silicon, and one level of Cr, EL2, and EL3 in gallium arsenide, were analyzed considering only multiphonon emission, and calculating the values of Huang–Rhys factor when it is not available. In the study of capture by attractive deep centers, such as single ionized donor centers of sulfur and selenium in silicon, both cascade and multiphonon mechanisms must be combined. In this case the importance of the nonacoustic phonon has been shown in the cascade process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358835
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4621-4628 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amplitude of random telegraph signals (RTS) in an n-channel metal–oxide–semiconductor field-effect transistor has been investigated. Current fluctuations originating when a single-channel electron is trapped or detrapped in the silicon dioxide have been evaluated. A simulation has been performed where the inversion-layer quantization, the dependence of the electron mobility on the transverse and longitudinal electric fields, and the influence of the oxide charges on free-carrier density and on electron mobility have been taken into account. This procedure provides the chance of studying the influence of trap depth in the oxide on the RTS amplitude. In addition, the contributions of the mobility and carrier fluctuations on the amplitude of discrete current switching have been separated, revealing the importance of each factor. Normalized mobility fluctuation has been defined and it was found that its dependence on the gate and drain voltages helped to explain the behavior of the normalized current fluctuations. Finally, the scattering coefficient was evaluated, showing good agreement with previously published data. All these results have allowed us to gain further insight into the role played by electron mobility fluctuations on random telegraph signal amplitude. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366200
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of the doping profile and deep level trap characteristics on generation-recombination noise (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3351-3357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation-recombination (g-r) noise originated by the fluctuating occupancy of deep level traps in the depletion regions of a junction field effect transistor (JFET) has been thoroughly analyzed. A numerical simulator of this type of device, which allows us to calculate all relevant electrical magnitudes in the structure, was used to calculate the noise power spectral density. To check our simulator, comparisons with experimental data of g-r noise in JFETs were made, showing very good agreement. Our numerical results have provided useful information about the influence on noise of several aspects such as the modelling of the shallow doping profile, and the relative contribution of each junction of the device on the total noise. In addition, the energetic position of deep levels in the band gap and the relative concentration of deep and shallow impurities were all combined to quantify the noise spectral density and to locate the region of the structure that contributes the most to the g-r noise. This report clearly shows the importance of including all technological parameters for a correct interpretation and study of low-frequency noise in JFETs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365647
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the position of deep levels on generation-recombination noise (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3581-3583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Power spectral density due to deep traps has been calculated in a junction field effect transistor (JFET) by a numerical procedure. Distribution of potential, density of carriers, and occupation factors were evaluated for any point of the structure. Different effects were found depending on the depth of the trap considered, such as spectra different from the pure Lorentzian shape or anomalous behavior of the noise amplitude with reverse voltage applied. The explanation of these effects may be useful for the characterization of midgap levels produced in JFETs under irradiation stress. Good agreement is achieved with the experiment. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115324
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