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  • 1
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    The Pleuranthodium (Zingiberaceae) of Mount Wilhelm, Papua New Guinea (2020)
    Naturalis Biodiversity Center
    In:  Blumea: Biodiversity, Evolution and Biogeography of Plants vol. 65 no. 2, pp. 95-101
    Details
    Publication Date: 2024-01-12
    Description: Three species of Pleuranthodium were encountered and collected during a survey of gingers at Mount \nWilhelm, Chimbu Province, Papua New Guinea. Based on new material, the only previously known Pleuranthodium \nfrom this area, P. piundaundense, is described in more detail highlighting new diagnostic characters and its known \ndistribution range is expanded based on identification of older specimens at Edinburgh from two other provinces. \nTwo species so far only known from Mount Wilhelm could not be identified after studying all protologues, types and \nmaterial from several herbaria. These are here described as new species, P. corniculatum and P. sagittatum. A key \nwith both floral and vegetative characters is provided to all three species. Pleuranthodium corniculatum is distinct \nin having apical appendages on the calyx, and P. sagittatum has a wrinkled calyx. All species are described and \nillustrated, and conservation assessments are made.
    Keywords: Plant Science ; Ecology ; Evolution ; Behavior and Systematics ; Chimbu ; Eastern Highlands ; Pleuranthodium corniculatum ; Pleuranthodium piundaundense ; Pleuranthodium sagittatum ; taxonomy ; Zingiberaceae
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2285-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogen plasma treatment and postannealing on GaAs solar cells on Si substrates have been investigated. It is found that postannealing temperature is an important parameter to obtain GaAs on Si with a long minority carrier lifetime. The minority carrier lifetime is increased and the deep level concentration is decreased by the hydrogen plasma treatment. Even after 450 °C postannealing with the complete recovery of the shallow impurity level, the minority carrier lifetime is still longer and the deep level concentration is lower than those of the as-grown sample. It means that the defects in GaAs on Si are passivated by hydrogen. The efficiency of GaAs-on-Si solar cell (air mass 0, 1 sun) is improved from 16.6% (as-grown) to 18.3% by the hydrogen plasma passivation and to 17.2% by the hydrogen plasma passivation and postannealing at 450 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372174
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4112-4115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial layers of Al0.22Ga0.78As have been grown on Si substrates by adopting thermal cycle annealing. The quality of the Al0.22Ga0.78As has been assessed by photoluminescence, deep-level transient spectroscopy, and double-crystal x-ray diffraction studies. The emergence of a new luminescence emission (1.718 eV), high concentrations of shallow levels, passivation of a deep level (0.43 eV), and dislocation reduction in the high-temperature thermal cycle annealed samples have been explained by a silicon diffusion mechanism and the formation of complex point defects. Deep-level emission at 0.64 eV has been attributed to disordering in the epitaxial layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363282
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  • 4
    Electronic Resource
    Electronic Resource
    Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3836-3838 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A vertical-cavity surface-emitting laser diode with 20 pairs of AlAs/GaAs distributed Bragg reflectors (DBRs) has been grown on a Si substrate using metalorganic chemical vapor deposition. Interfacial roughness and compositional profile of the AlAs/GaAs DBR structure were studied by cross-sectional scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger electron spectroscopy. Cross-sectional SEM and TEM observations reveal quasi-periodic zigzag roughness and nonuniformity in the AlAs and GaAs layers. Auger electron spectroscopy reveals compositional transitions at the AlAs/GaAs heterointerfaces. A lower reflectivity of the AlAs/GaAs DBR on the Si substrate is caused by the degraded heterointerfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358560
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  • 5
    Electronic Resource
    Electronic Resource
    Photovoltaic properties of an AlxGa1−xAs solar cell (x=0–0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9375-9378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a thermal cycle annealing (TCA) process on the defects in GaAs and AlxGa1−xAs solar cells on Si substrates are described in this paper. The defect density is reduced and the solar cell efficiency is improved by TCA. The defect density and the solar cell efficiency are evaluated in detail with respect to TCA temperature and Al composition. The problems involved in the fabrication of a high efficiency AlGaAs solar cell on a Si substrate are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362616
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  • 6
    Electronic Resource
    Electronic Resource
    High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4196-4199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active-area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active-area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27 °C) under two-terminal and four-terminal configurations, respectively, is demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359880
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  • 7
    Electronic Resource
    Electronic Resource
    Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1170-1172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three-dimensionally on Si at 750 °C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104354
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  • 8
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The growth mode changes from three-dimensional to two-dimensional with increasing V/III ratio. GaP on Si grown at a low V/III ratio of 800 contains many dislocations, stacking faults, and microtwins; however, a significant reduction in the density of these defects is observed in GaP grown at high V/III ratio of 3200.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104975
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  • 9
    Electronic Resource
    Electronic Resource
    Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1265-1267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor field-effect transistors (MESFETs) on Si substrates back-coated with SiO2 grown at high temperature by metalorganic chemical vapor deposition have shown good pinch-off and suppressed sidegating. The SiO2 back-coating suppresses Si incorporation into an undoped GaAs layer during growth, and use of such an undoped layer with a low electron concentration beneath the channel layer improves a pinch-off characteristic. Higher growth temperature also improves crystallinity of GaAs layers grown on Si and helps to suppress the sidegating effect of GaAs MESFETs. The maximum transconductance of 160 mS/mm and the K value of 46.8 mA/V2 mm have been obtained for a MESFET with 2.5 μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104331
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  • 10
    Electronic Resource
    Electronic Resource
    Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 445-447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature and behavior of antiphase boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP, and GaAsP/GaAs strained-layer superlattices as intermediate layers have been studied by transmission electron microscopy. The antiphase domains are found to be very complicated three-dimensional polygons consisting of several subboundaries in different orientations. Self-annihilation of antiphase domains during crystal growth of GaAs on (001) 0.4° off or (001) 2° off Si substrates is directly observed for the first time through plan-view and cross-sectional observations. Based on these findings, a mechanism of annihilation of these domains is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101870
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