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  • 1
    Electronic Resource
    Electronic Resource
    Elastic constants and thermal expansion coefficient of metastable C49 TiSi2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2816-2820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic constants and thermal expansion coefficient of C49 TiSi2 thin films have been investigated by in situ curvature measurement during heat treatment and ex situ x-ray diffraction measurements. The C49 TiSi2 compound was formed from Ti-Si multilayers deposited on monocrystalline silicon and sapphire substrates. The films were polycrystalline without any evident texture. Young's modulus (142 GPa), Poisson's ratio (0.27), and the thermal expansion coefficient (10.9×10−6 K−1) have been determined. Note that these values are averages over random crystal orientations. Directly after formation C49 TiSi2 films exhibit tensile stress. This stress relaxes considerably above 375 °C. Below this temperature the thermal expansion is found to be independent of the state of relaxation of the C49 TiSi2 film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353058
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  • 2
    Electronic Resource
    Electronic Resource
    A kinetic study on tungsten deposition from SiH4 and WF6 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1583-1588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of tungsten deposition from a SiH4/WF6 gas mixture was investigated for SiH4/WF6 feed-gas flow ratios lower than unity. By performing selective depositions, care was taken to ensure that the kinetic data was obtained in the surface-kinetics controlled regime. It was found that the reaction kinetics of the deposition process depends on the SiH4/WF6 ratio. For low SiH4/WF6 ratios (smaller than ≈0.7) the growth rate is slightly negative in [WF6] and almost quadratic in [SiH4]. The growth rate is almost independent of temperature between 200 and 350 °C. On the basis of our measurements it is argued that in this regime the surface is covered mainly with W, WFx, and F, and that the rate-limiting step is the dissociative adsorption of SiH4 on this surface. For higher SiH4/WF6 ratios (0.7≤SiH4/WF6≤1) the growth rate increases sharply as the SiH4/WF6 ratio increases. In this regime the growth rate cannot be expressed in the simple form: rate=A⋅[WF6]α⋅[SiH4]β since the growth rate is more sensitive to the SiH4/WF6 partial pressure ratio than to the absolute values of the SiH4 and WF6 partial pressure. For SiH4/WF6 ratios as high as 1, the growth rate is limited only by the flux of the species hitting the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351673
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics and inhibition of growth of chemical vapor deposited thin tungsten films on silicon from tungsten hexafluoride (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 490-498 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics and inhibition of growth of chemical vapor deposited thin W films on Si(100) from WF6 was studied with in situ growth stress and reflectivity measurements and ex situ weight gain measurements. A systematic series of experiments at varying WF6 flow, total pressure, and temperature show that the thickening kinetics and inhibition of the growth are controlled by two processes: WF6 diffusion through the gas phase and Si diffusion through the thickening columnar film. The steady state growth kinetics are controlled by WF6 diffusion in the gas phase whereas inhibition of the growth occurs at the transition from WF6 gas diffusion limited to Si solid state diffusion limited growth. A simple model based on WF6 gas phase diffusion and Si solid state diffusion is presented which gives a quantitative description of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351879
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  • 4
    Electronic Resource
    Electronic Resource
    A thermodynamic and kinetic study of chemical vapor deposition of tungsten from WF6 and GeH4 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2353-2360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper a thermodynamic and kinetic study of the deposition of tungsten on silicon (100) from tungsten hexafluoride (WF6) and germane (GeH4) is presented. Thermodynamic calculations, as well as experiments with a closed reactor, indicate that the reaction occurring during deposition is WF6+3GeH4→W+3GeF2+6H2. The growth rate as a function of process parameters is obtained for depositions in the temperature range from 600 to 800 K and a total pressure range from 150 to 1000 mTorr. Experiments show that the germane reduction of tungsten hexafluoride is of 0.9 order in WF6, −0.2 order in GeH4, and zero order in H2. The activation energy is 34 kJ/mol. The deposition rate does not change when SiH4 is added to the GeH4/WF6 mixture, while, on the contrary, a small amount of GeH4 reduces the growth rate from a SiH4/WF6 mixture considerably. The kinetic data indicate that the formation of GeF2 might be the rate-limiting step.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350353
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  • 5
    Electronic Resource
    Electronic Resource
    Cl2 reactive ion etching mechanisms studied by in situ determination of ion energy and ion flux (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7996-8004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study of etching mechanisms in Cl2 reactive ion etching is reported. The ion-impact energy distribution and ion current density have been measured in situ at the rf electrode of a parallel-plate reactive ion etcher. This diagnostic method has been used for the first time to unravel etch characteristics in a practical etching environment. Samples of Si, SiO2, Ti, and TiSi2 have been etched both in Cl2 and Ar discharges, and the etch rates have been related to the ion flux and impact energy distribution. The angular impact energy distribution for both ions and neutrals has been calculated numerically in order to study the contribution of fast neutrals and the angular distribution of impinging species to the etch rate. Sputter yields have been determined from the observed etch rate and the ion current density, taking into account the (angular) energy distributions of bombarding ions and neutrals. Comparison of the obtained sputter yields in Ar and Cl2 discharges with corresponding data from (chemically assisted) ion-beam sputtering gives further insight into the etching mechanisms of Si, SiO2, Ti, and TiSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347495
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  • 6
    Electronic Resource
    Electronic Resource
    Measurement of ion impact energy and ion flux at the rf electrode of a parallel plate reactive ion etcher (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1253-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study on the ion impact energy distribution and the total ion flux at the driven electrode of a parallel plate reactive ion etcher is presented. Results are shown for 13.56 MHz discharges in Ar, Ar/H2, N2, O2, Cl2, and SF6/He over a pressure range of 0.3–40 Pa. The ion impact energy distribution consists of a collision-free part and a collision-induced part. It is observed that in Ar, N2, O2, and Cl2 the collision-induced part contains single and double peaks at regular energy intervals. This peaked structure is attributed to charge exchange processes in the sheath. Both the collision-free part and the collision-induced part of the ion impact energy distribution are well described by a model based on a constant sheath width, a sinusoidal sheath voltage, and a power law for the electric field in the sheath. The only adjustable parameter in the model is the sheath thickness. The sheath thickness has also been determined independently from the total ion current density using the Child–Langmuir law. The obtained values are in good quantitative agreement with each other and with the observed optical sheath thickness, demonstrating the overall consistency of the present approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347311
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  • 7
    Electronic Resource
    Electronic Resource
    A novel bulge-testing setup for rectangular free-standing thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4026-4031 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A newly designed bulge-testing apparatus for the mechanical testing of the tensile properties of free-standing thin films has been constructed and tested. With this instrument it is possible to measure the elastic modulus, tensile and compressive growth stress, and plain strain yield strength in thin films. The setup features a high strain resolution (4E-10), and a high stress resolution, e.g., 〉0.2 MPa for bulge heights larger than 10 μm. In our setup, thin films are stressed by a differential gas pressure across the film, while the deflection is measured by a scanning laser beam. The scanning laser beam measures the curvature of the bulge rather than the bulge height. This makes the setup insensitive to a possible initial nonflatness of the film. This also provides the possibility to measure the growth stress of films that were deposited under a compressive stress. We show the results of measurements of the plane strain modulus on thin tungsten films and on both flat and nonflat aluminum (alloy) film samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150029
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of temperature gradients on partial pressures in a low-pressure chemical-vapor-deposition reactor (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3130-3139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements and calculations of the influence of temperature gradients on the partial pressures of the gas species in a cold-wall chemical-vapor-deposition reactor are presented. The experiments were performed at low pressures (300–500 Pa total pressure) and gas mixtures consisting of hydrogen, nitrogen, and tetrafluoromethane. The partial pressures were determined by Raman spectroscopy. The Soret effect (or thermal diffusion) has a large influence on the partial pressures of heavy gases in the vicinity of the heated wafer. In some cases a decrease in partial pressure of 20% compared to the inlet partial pressures was observed. Numerical calculations were performed to predict the behavior of the gas mixture. For mixtures under investigation the gas temperatures as well as the changes in partial pressures due to the Soret effect were predicted correctly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357495
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  • 9
    Electronic Resource
    Electronic Resource
    Deformation of Si(100) wafers during rapid thermal annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2830-2836 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper in situ wafer curvature measurements are presented that were performed during rapid thermal annealing of silicon wafers. The wafer curvature due to thermal stress originating from a nonuniform temperature distribution was measured as a function of time for a fixed setting of the illumination source power. The presence of thermal stress was clearly demonstrated. It was found that wafers deform during the complete annealing cycle and moreover that, the deformation is largest during the heating and cooling transients. The influence of various wafer supports on the deformation was investigated. The use of a susceptor and a guard ring reduce the wafer deformation compared to a free-standing wafer by a factor of 6 and 10, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356175
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  • 10
    Electronic Resource
    Electronic Resource
    Selective chemical vapor deposition of tungsten using WF6 and GeH4 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 354-356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germane (GeH4) has, for the first time, been used as a reducing agent for tungsten hexafluoride in selectively depositing tungsten on silicon. As shown by x-ray diffraction, films deposited below 400 °C consist of the β-W phase with A15 cubic crystal structure. This A15 structure proved to be stabilized by germanium which is probably incorporated in the film as a hitherto unknown W3Ge compound. Annealing for 1 h at 575 °C did not change the β-W structure to the low-resistivity body-centered-cubic α phase of tungsten. The superconducting transition temperature of the films is ≈3 K. The growth rate dependence on temperature, total pressure, and WF6, GeH4, and H2 partial pressure has been investigated. At deposition temperatures above 400 °C the deposited films consist of a mixture of the β and α-W phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103690
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