ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The development of indium gallium arsenide (Eg=0.75 eV) photovoltaic devices for thermophotovoltaic power generation is described. A device designed for broadband response had an air mass zero efficiency of 11.2 % and an internal quantum yield of over 90% in the range of 800 to 1500 nm. Devices designed for narrow-band response have also been developed. Both structures are based on a n/p junction which also makes them applicable for integration into indium phosphide based, monolithic, tandem solar cells for solar photovoltaic applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111585
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