ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Physical Properties of Rocks: Fundamentals and Principals of Petrophysics (1996)
    Elsevier
    In:  Stuttgart, 403 pp., Elsevier, vol. 18, no. Publ. No. 12, pp. 267, (ISBN 3-534-14102-4)
    Details
    Publication Date: 1996
    Keywords: Textbook of geophysics ; Physical properties of rocks ; porosity ; permeability ; conductivity ; Density ; susceptibility ; incompressibility ; shear ; modulus ; Lame ; viscosity ; Schoen ; Schon
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    BIBLIOGRAPHY SEISMOLOGY
  • 2
    Electronic Resource
    Electronic Resource
    Trapping in organic field-effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 336-342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of single- and polycrystalline organic field-effect transistors are analyzed. The effect of bulk, interface, and grain boundary traps is investigated. The frequently observed dependence of the field-effect mobility on the gate voltage is ascribed to trapping processes rather than to an intrinsic charge transport mechanism in these organic semiconductors. Furthermore, the thermally activated mobility in polycrystalline devices, frequently observed, is ascribed to the formation of a potential barrier at the grain boundaries of the polycrystalline semiconductor. The barrier height depends significantly on the trap density and the position of the Fermi energy and therefore on the gate voltage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329667
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence and electrical properties of Sn-doped CuGaSe2 single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6961-6965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-effect and photoluminescence measurements have been carried out on Sn-doped CuGaSe2 single crystals. The doping was performed either during chemical vapor transport growth with iodine or by a diffusion step at temperatures between 200 and 400 °C. Room temperature resistivity can be varied in the range between 10−2 and 106 Ω cm. Hall-effect data can be explained using a model containing two acceptor levels, one of which is very shallow, and a donor level. Due to doping the concentration of the first acceptor, whose activation energy is 59 meV, is decreased and the donor concentration is increased, but no n-type conductivity was observed. The photoluminescence spectra can be explained by an acceptor level of 50 meV, two donor levels of 80 and 110 meV, respectively, and a deep state of 400 meV. VCu, VSe, VSe complexes, and Sn on cation lattice sites are suggested as origins of these states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361460
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Sharp optical emissions from Cu-rich, polycrystalline CuInSe2 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2799-2802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of Cu-rich CuInSe2 thin films prepared by the selenization of Cu/In/Cu alloys in a H2Se atmosphere have been studied by photoluminescence (PL) spectroscopy. PL spectra of as-grown samples were dominated by transitions due to intrinsic defect levels, which are ascribed to VIn (24 meV), CuIn (75 meV), and Cui (53 meV). After chemical etching (10% KCN), emission lines attributed to free and bound excitonic emissions and their LO phonon replica became visible. Accurate analysis of the peak positions revealed values of 4.3 meV, 1.0441 eV, and 28.7 meV for the binding energy of the free exciton, the band gap, and the value for the LO phonon, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364306
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrical and optical characterization of ion-implanted CuGaSe2 single crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1274-1278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuGaSe2 single crystals were doped with B and Ge by ion implantation and analyzed by Hall effect, photoluminescence, and reflected second harmonic generation measurements. After ion implantation the crystals exhibited a destroyed surface structure. Measurements of the band edge photoluminescence and the second harmonic generation before and after annealing clearly reflected the thermal healing of the implantation-induced crystalline defects. As expected the analysis of the electrical measurements showed the incorporation of donor levels due to implantation with B and Ge, which led to electrically compensated samples. However no n-type conductivity could be obtained. This is ascribed to self-compensation of the defects for implantation ion doses higher than 1015 cm−2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368194
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Excitonic luminescence in CuInSe2 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 211-213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-edge luminescence of CuInSe2 single crystals was studied in the temperature region between 2 and 300 K. Sharp emission lines were attributed to the decay of free and bound excitons and their phonon replica. Accurate analysis of the peak position revealed values of 4.4 meV and 1.044 eV for the binding energy of the free exciton and the band gap at 2 K, respectively. Investigations on n- and p-type material showed different emission lines, which are ascribed to excitons bound to the different dominating intrinsic defects in these materials. Furthermore, the results are compared to thin-film studies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121758
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Surface and bulk mobilities of oligothiophene single crystals (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3574-3576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality single crystals of α-quaterthiophene (α-4T) and α-hexathiophene (α-6T) were investigated to compare intrinsic bulk and surface electrical properties. The bulk properties of these organic p-type semiconductors are derived from extended current–voltage characteristics and the surface properties from single crystal field-effect transistor measurements. Most significantly, charge carrier mobilities as high as 0.5 cm2/V s are observed in α-6T both in the bulk and at the surface. The high quality and purity of the crystals are evident from the low trap densities(〈1015 cm−3) and the even lower dopant concentrations (2×1013 for α-4T and 7×1010 cm−3 for α-6T). These intrinsically high performance figures, together with the ease of processing, make these oligothiophenes attractive materials for "plastic electronic" devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122828
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Modeling of the temperature dependence of the field-effect mobility in thin film devices of conjugated oligomers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 260-262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple model is proposed for charge carrier transport across grain boundaries with an acceptor-like trap level. Potential wells between the grains are formed due to negatively charged grain boundaries. Based on this model, a variety of temperature dependencies of the charge carrier mobility can be described. Using realistic parameters, this model reproduces very well the measured temperature dependencies of the field-effect mobility in polycrystalline pentacene and oligothiophene thin film devices. Therefore, it seems to be difficult to investigate the intrinsic material properties of organic semiconductors using only polycrystalline field-effect devices, since they may be masked by the effects of traps and grain boundaries. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123274
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    n-type conduction in Ge-doped CuGaSe2 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2969-2971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to prepare n-type CuGaSe2 as-grown, p-type CuGaSe2 single crystals were at first doped by Ge implantation. Thermal healing of the implantation damage in vacuum resulted in strong electrical compensation of the material, but not in n-type conduction. This limitation was overcome by annealing of implanted samples in Zn atmosphere, resulting in n-type conduction of CuGaSe2 with a carrier concentration at room temperature of up to 1016 cm−3. The samples were analyzed by photoluminescence, resistivity, and Hall effect measurements. It was found that the Zn–Ge codoping minimizes the formation of Cu vacancies, which act as acceptor levels and lead to self-compensation, by the formation of ZnCu defects. Furthermore, the number of electrically active Ge dopants is increased by a rise of the GeGa concentration compared to the GeCu defect density. The possibility of n-type conduction in Ga-rich CuIn1−xGaxSe2 compounds opens the possibility of the preparation of homojunction photovoltaic devices and might lead to improved solar cell performance of large band-gap chalcopyrites. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125204
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Reversible gas doping of bulk α-hexathiophene (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1556-1558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sensitivity of the electrical properties of α-hexathiophene single crystals to exposure to air, oxygen, helium, and nitrogen is investigated by space charge limited current spectroscopy. Whereas no changes are seen in helium and nitrogen atmosphere, the acceptor concentration and trap density increase in air or oxygen. Nevertheless, stable equilibrium concentrations, much lower than in thin films, are reached after a few days of exposure and remain unchanged for many months. Therefore, the observed thin film device instabilities and their degradation have to be ascribed to grain boundary-enhanced or interface effects. The present results indicate that air-stable electronic devices can be prepared from oligothiophenes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124753
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...