Publication Date:
2015-10-02
Description:
This paper reports initial the demonstration of prototype Ge 1− x − y Si x Sn y light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [ n -Ge/ i -Ge 1− x − y Si x Sn y / p -Ge(Sn/Si)] using ultra low-temperature (T
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
Permalink