ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The temperature dependence of the three states of positive muons in the semiconductors with diamond structure (μ + in diamagnetic statesμ d and paramagnetic muonium Mu and Mu*) have been investigated on six Si (pure, B and P doped) and four Ge (ultrapure, CZ-grown undoped, Ga and Sb doped) single crystals by longitudinal field-quenching and radio-frequencyμ +SR. Clear evidence for the transition Mu* →μ d is found. The influence of light-induced charge-carriers is shown to be quite different in p- and n-type material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02068963
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