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  • 1
    Electronic Resource
    Electronic Resource
    A model of laser ablation in nonmetallic inorganic solids (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3158-3162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented of laser ablation, primarily applicable to nonmetallic solids. The model does not include any critical phenomena, but assumes evolution of vacancy clusters due to the emission of atoms bonded weakly around vacancies and vacancy clusters on surfaces. The result of calculation shows a high power dependence of the yield on the laser fluence, agreeing with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352985
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice instability at excited states of the self-trapped excitons in MgF2 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7831-7835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated lattice relaxation in MgF2 following electronic excitation of the self-trapped excitons, employing a cascade excitation technique in which self-trapped excitons generated by an electron pulse are excited further by a 308-nm laser pulse. It is found that the F centers are generated by excitation of self-trapped excitons at 5 K, although they are not produced by an electron pulse alone. The nature of the excited states of the self-trapped excitons from which the F centers are evolved and the absence of F-center generation from electron-hole pairs are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347514
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  • 3
    Electronic Resource
    Electronic Resource
    Visible photoluminescence in Si+-implanted silica glass (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7779-7783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated visible photoluminescence excited by Ar-ion laser (488 nm, 2.54 eV) at room temperature from Si+-implanted silica glass, as-implanted and after subsequent annealing in vacuum. We found two visible luminescence bands: one peaked around 2.0 eV, observed in as-implanted specimens and annealed completely after heating to about 600 °C, the other peaked around 1.7 eV observed only after heating to about 1100 °C, the temperature at which Si segregates from SiOx. It was found that the 2.0 eV band anneals parallel to the E' centers, as detected by electron spin resonance studies. It was also found that Raman lines around 520 cm−1, due to Si—Si bonds, grow and that interference patterns are induced by annealing Si+-implanted silica glass. Based on these studies, we ascribe the 2.0 eV band to the electron-hole recombination in Si-rich SiO2 and the 1.7 eV band to the electron-hole recombination in the interface between the Si nanocrystal and the SiO2 formed by segregation of crystalline Si from SiOx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357031
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  • 4
    Electronic Resource
    Electronic Resource
    Direct measurement of transient macroscopic volume change induced by generation of electron-hole pairs in GaP and GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 146-148 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a direct measurement of the macroscopic volume change of GaP and GaAs induced by irradiation with an electron pulse by means of the photoelastic technique. We find that metastable states lasting over 1 ms in both GaAs and GaP are formed and that their yield increases as the temperature increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104955
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of initial stage of Pd-Si (111) and Au-Si (111) interface reactions by means of high-resolution proton energy-loss spectroscopy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1072-1074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution spectroscopy of protons incident under nonchanneling condition and scattered by 12° on Pd- and Au-deposited Si(111) surfaces has been employed for direct layer-by-layer analysis of the depth distribution of Au and Pd. For nearly monolayer deposition at room temperature, most of the Au atoms are found to remain on the silicon surface, while the Pd atoms are found to be distributed over the two layers, with the palladium composition not exceeding that of Pd2Si. We also found that the most probable energy loss of protons scattered from the Au-deposited surface is sensitive to the depth of the Au atoms on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98743
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-induced sputtering of Ga0 and Ga+ from the GaP (110) surface: Its relation to surface imperfection (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1980-1982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured emission of Ga+ ions and neutral Ga0 atoms induced by irradiation of the GaP (110) surface with laser pulses of subband-gap energies. It is found that the Ga+ yield of partially annealed Ar+ ion bombarded surfaces is reduced by thermal annealing and also by repeated irradiation with laser pulses, while the Ga0 yield is not influenced to an important extent by these treatments. The Ga+ emission, which occurs at a lower fluence than Ga0 emission, is ascribed to emission from defect sites at surfaces. We suggest that measurements of laser-induced particle emission for subband-gap energies will be useful for detection and elimination of low-density defects on surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102995
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  • 7
    Electronic Resource
    Electronic Resource
    Recombination-induced metastable to stable transformation of the EL2 center in GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 639-641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We carried out transient optical absorption measurements of the conversion, induced by electron pulse irradiation, of the GaAs EL2 between the normal (EL20) and metastable (EL2*) states. It is found that no thermal barrier exists in the EL2* to EL20 conversion when induced by electron pulse irradiation and that the yield of the EL20 to EL2* conversion is much lower than that of the reverse conversion. These conversion processes were attributed to arise from the electron-hole recombination at the EL2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101809
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  • 8
    Electronic Resource
    Electronic Resource
    Optically detected magnetic resonance studies of donor-double-acceptor recombination processes in n-type GaP crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2035-2041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied luminescence and optically detected magnetic resonance (ODMR) of n-type GaP crystals. Two luminescence bands at 1.5 and 1.7 eV, among which the 1.7 eV one decays faster than the other, are observed in the temperature range between 4.2 and 77 K. An ODMR signal, which shows the same photon-energy dependence as the 1.5-eV luminescence band, is found to have the characteristics of the electrons trapped by shallow donors. We suggest that the two luminescence bands arise from electron transitions from shallow donors to the same double acceptors: the 1.7 eV luminescence is to the doubly occupied acceptors and the 1.5 eV luminescence is to those half-occupied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342898
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced reemission of silicon atoms implanted into quartz (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3663-3666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reemission of Si atoms implanted into SiO2 by both pulse-laser irradiation and thermal annealing has been investigated using the techniques of optical absorption and Rutherford backscattering. It is found that, even though the number of Si atoms in the surface is reduced in both cases, laser irradiation shifts the distribution of implanted Si atoms toward the surface, whereas thermal annealing shifts the distribution backward. The results are explained in terms of thermal diffusion arising from a temperature gradient induced by nonuniform optical absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341407
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of molecular-beam epitaxially grown ZnSe on GaAs and GaP by means of ion channeling (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4460-4464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural disorder at the interface of molecular-beam epitaxially grown ZnSe layers on GaAs and GaP substrates has been investigated by means of the Rutherford backscattering channeling technique. For ZnSe layers grown on GaAs substrates, for which the lattice mismatch is only about 0.25%, high-quality ZnSe layers were obtained independent of the layer thickness with little increase in the minimum yield χmin at the interface. For ZnSe layers grown on GaP substrates, for which the lattice mismatch is about 4%, a disordered layer was found in the vicinity of the interface. The crystalline quality for ZnSe grown on GaP substrate was found to depend on the layer thickness; at a sufficiently great layer thickness, the crystallinity is comparable to the layers grown on GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339034
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