Publication Date:
2018-09-11
Description:
Author(s): Kazuki Takeishi, Satoshi Hiura, Junichi Takayama, Kodai Itabashi, Masayuki Urabe, Akihiro Washida, Takayuki Kiba, and Akihiro Murayama Semiconductor quantum dots enable integration of quantum optoelectronics into information processing with ultralow energy consumption. Here (In,Ga)As quantum-dot–quantum-well (QD-QW) hybrid nanosystems are proposed, where QD excited spin states are laterally tunnel coupled through the adjacent QW. The relaxation time of the spin ensemble’s polarization is 70 times the photoluminescence decay time, showing a high degree of spin polarization. The transient spin polarization in the QDs can be precisely controlled by the QW thickness, paving the way for a dynamical spin network. [Phys. Rev. Applied 10, 034015] Published Mon Sep 10, 2018
Electronic ISSN:
2331-7019
Topics:
Physics
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