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  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy studies of crystal-to-amorphous transition in ion implanted silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1126-1130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of 5 MeV ion implanted silicon at room temperature has been investigated in detail by means of cross-sectional transmission electron microscopy. Buried amorphous layers were observed in the specimens obtained by ion doses of 1×1017 and 2×1017/cm2 with abrupt amorphous-to-crystal interfaces. Damaged layers adjacent to the amorphous layers included many dislocation loops and the concentration increased toward the amorphous region. Microdiffraction patterns and high-resolution images showed that this damaged region is defective crystalline silicon, suggesting that homogeneous amorphization occurs due to an accumulation of defects. The atomistic structure of the damaged regions was analyzed by comparing high-resolution electron microscopy images with those calculated on the basis of a model for amorphization processes proposed previously [T. Motooka, Phys. Rev. B 49, 16 367 (1994)]. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363857
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  • 2
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of CuPt-type ordering in off-stoichiometric III-V semiconductor alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2370-2374 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuPt-type ordering in off-stoichiometric III-V semiconductor alloys has been investigated by a Monte Carlo method based on an Ising-like crystal growth model for the layer-by-layer stacking on a (001) substrate. (110) Fourier power spectra of the atom configurations thus obtained exhibit superlattice spots due to the CuPt ordering. In the (11¯0) spectra, satellite reflections arise, flanking the fundamental lattice spots of the zinc-blende structure and their intensity increases with the progress of ordering. The results are in good agreement with the experimental results previously obtained by transmission electron microscopy. The calculated atomic arrangement confirmed that the compositional modulation is the cause of the satellite reflections along the [110] direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358760
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  • 3
    Electronic Resource
    Electronic Resource
    Atomistic simulations of structural relaxation processes in amorphous silicon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 686-689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural relaxation processes in amorphous silicon (a-Si) have been examined by molecular-dynamics (MD) simulations using the Tersoff interatomic potential. The a-Si networks generated by rapid quenching from liquid Si were annealed. Structural changes due to the relaxation of a-Si networks were observed. The present MD simulations reproduce well experimental measurements of changes in radial distribution functions, static structure factors, bond angle distributions, and phonon densities of states due to structural relaxation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425437
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  • 4
    Electronic Resource
    Electronic Resource
    Surface morphology of ion-beam-irradiated rutile single crystals (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4151-4153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-induced structural changes in rutile (TiO2) have been examined in detail using transmission electron microscopy (TEM). Single crystals of rutile with (100) orientation were irradiated with 360 keV Xe ions at room temperature to a fluence of 4×1015/cm2. In addition to a buried damage layer induced by projectile ions, a damage layer was formed near the surface (thickness about 10 nm). Nanobeam electron diffraction measurements and high-resolution TEM observations revealed that the surface damage layer consists of rutile crystallites with different orientations compared to the original single crystal. We discuss damage recovery processes in ion irradiated rutile within the context of our results as well as previous observations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335844
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-beam-induced spinel-to-rocksalt structural phase transformation in MgAl2O4 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2556-2558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ion-beam-induced metastable phase in magnesium aluminate spinel (MgAl2O4) has been examined in detail using transmission electron microscopy. Single crystals of MgAl2O4 with (111) orientation were irradiated with 180-keV Ne+ ions at 120 K to fluences of 1016 and 1017/cm2. Selected-area electron diffraction patterns obtained from the irradiation-induced damaged layer revealed that all even hkl reflections (e.g., 222) possess strong intensity, while all odd hkl reflections (e.g., 111) are weak. The features of these diffraction patterns corresponded to those of the rocksalt (NaCl) structure, suggesting that an ordered spinel to disordered rocksalt structural phase transformation in MgAl2O4 was induced by ion beam irradiation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126406
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  • 6
    Electronic Resource
    Electronic Resource
    Recrystallization of MeV Si implanted 6H-SiC (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3534-3536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructures of recrystallized layers in 8 MeV Si3+ ion implanted 6-H-SiC (0001) wafers have been characterized by means of transmission electron microscopy. Epitaxial recrystallization of buried amorphous layers was observed at annealing temperature as low as 1000 °C. Layer-by-layer epitaxy of 6H-SiC initially occurred and it was changed to columnar growth when layer-by-layer growth exceeded 100 nm in thickness. From the microdiffraction analysis, it was found that the columnar regions are defected 6H-SiC with crystal orientations different from the substrate. In addition to 6H-SiC, epitaxial 3C-SiC was also confirmed in the recrystallized layer. Based on these results, we have proposed a structure model of the recrystallized layer in which stacking faults in the columnar regions are induced by mismatched connections between the columnar and layered 6H-SiC regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117236
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  • 7
    Electronic Resource
    Electronic Resource
    Dose dependence of microstructural evolution in oxygen-ion-implanted silicon carbide (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy and ion channeling (RBS/C) have been used to characterize the microstructures and damage distributions in oxygen-ion-implanted silicon carbide (SiC). 6H–SiC single crystals with [0001] orientation were irradiated with 180 keV O+ ions at 650 °C to fluences ranging from 0.2×1018 to 1.4×1018/cm2. No continuous buried amorphous layer was formed in the specimen with 0.2×1018 O+/cm2, although there were striated regions consisting of amorphous and crystalline structures at depth between 200 and 300 nm. A continuous buried amorphous layer appeared above 0.4×1018 O+/cm2, and the amorphous regions grew in size with increasing fluence. TEM and RBS/C results indicated that microstructures and elemental distributions change drastically between 0.7×1018 and 1.4×1018 O+/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124704
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  • 8
    Electronic Resource
    Electronic Resource
    High-dose oxygen ion implantation into 6H-SiC (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 352-354 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650 °C to fluences of 0.7×1018 and 1.4×1018/cm2. A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124372
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  • 9
    Electronic Resource
    Electronic Resource
    Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun (2002)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 389-393 (Apr. 2002), p. 467-470 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/06/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.467.pdf
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  • 10
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    High-dose oxygen ion implantation into 6H-SiC (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-07-19
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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