ISSN:
1573-7357
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The temperature dependence of the resistivity over the range 1.8–20 K has been measured on the narrow-gap semiconductor SnTe with various Mn contents (〈2.2at.%) and carrier concentrations [p = (1.2–8) × 1020 cm−3]. The resistivity shows an anomaly at some magnetic ordering temperature T m, which depends sublinearly on the Mn content c, but not linearly. However, together with a negative magnetoresistance, we have confirmed that the carrier scattering in this crystal is due to the s-d interaction as in dilute magnetic alloys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00116311
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