ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4116-4122 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of two-step annealing, rapid thermal annealing (RTA) followed by furnace annealing (FA), on the crystalline and electrical properties of buried n-type layers formed in (100) Si by As implantation at an incident energy of 1 MeV have been investigated. The crystalline properties have been examined by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties have been studied by differential Hall measurements. A comparison between the annealing process of two-step annealing and that of RTA or FA alone is made. The experimental results obtained from this work clearly show that buried n+ layers without residual defects can be formed by the use of RTA at 1050 °C followed by FA at 1000 °C, and that they are difficult to be formed by one-step annealing of FA or of RTA.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6665-6673 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) has been carried out by using a graphite strip heater for Si substrates which are implanted with As+ ions at an incident energy of 1 MeV to a high dose of 1×1015/cm2. Annealing characteristics for As-implanted Si substrates have been investigated by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties for the buried n-type layer formed in the substrate during RTA have been examined by differential Hall measurements. A comparison between the annealing process of RTA and that of furnace annealing is made. The experimental results obtained from this work show clearly that the growth of secondary defects in high-energy As+-implanted layers in Si can be effectively suppressed by the use of RTA at 1050 °C, which is not the case for furnace annealing under conventional conditions, e.g., at 1000 °C for 60 min. It has been also shown that a high electrical activation of implanted As atoms is achieved by RTA at 1050 °C, resulting in the formation of a buried n-type layer with a maximum carrier concentration of around 1.5×1019/cm3. Some anomalous electrical properties have been measured in the samples treated by RTA.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5555-5563 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic ions have been implanted in (100)Si at an incident energy of 1 MeV to a dose of 1×1015/cm2. Rutherford backscattering measurements with a 1.5-MeV He-ion beam have shown that a buried amorphous layer is formed in the Si substrate which is implanted at a low ion-beam current of 0.8 μA and that considerable annealing occurs when implantation is carried out at a high ion-beam current of 2 μA. The implantation-induced amorphous layer recrystallizes after annealing above 550 °C, but a high density of lattice defects still remains in the substrate even after annealing at 1000 °C. Defect observations using a cross-sectional transmission electron microscope have revealed that those defects are located at the two depths corresponding to the initial transition regions where the crystallinity is changed from the amorphous to nonamorphized states in the substrate. In addition, secondary defects also exist in a particular region inside the initial buried amorphous layer. The recrystallization of the buried amorphous layer during post-implant annealing is initiated not only from the deeper part of the substrate but also from the nonamorphized surface layer. From a series of isothermal annealing studies, it has been shown that the recrystallization rates at 550 °C are 140 and 180 A(ring)/min on the frontside and backside of the buried amorphous layer, respectively. Electrical profile measurements, using the differential Hall method, have shown that a highly doped, buried conductive layer with a peak carrier concentration of around 2×1019/cm3 can be formed by annealing above 800 °C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1748-1750 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron atoms are incorporated into (100)Si wafers by heating the substrates at 800 °C for 30 min in a (B2H6+H2) atmosphere and by subsequent rapid thermal annealing above 900 °C. Atomic and carrier-concentration profiles of boron-doped layers have been examined by a secondary-ion mass spectrometry and by differential Hall measurements, respectively. Experimental results have clearly shown that ultrashallow p+ layers, 300 A(ring) thick, with a surface carrier concentration of 7.26×1019/cm3 can be formed by diffusion of boron at 800 °C and by subsequent RTA at 100 °C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: RNase III, a double-stranded RNA-specific endonuclease, is proposed to be one of Escherichia coli 's global regulators because of its ability to affect the expression of a large number of unrelated genes by influencing post-transcriptional control of mRNA stability or mRNA translational efficiency. Here, we describe the phenotypes of bacteria carrying point mutations in rnc, the gene encoding RNase III. The substrate recognition and RNA-processing properties of mutant proteins were analysed in vivo by measuring expression from known RNase III-modulated genes and in vitro from the proteins' binding and cleavage activities on known double-stranded RNA substrates. Our results show that although the point mutation rnc70 exhibited all the usual rnc null-like phenotypes, unlike other mutations, it was dominant over the wild-type allele. Multicopy expression of rnc70 could suppress a lethal phenotype of the wild-type rnc allele in a certain genetic background; it could also inhibit the RNase III-mediated activation of λN gene translation by competing for the RNA-binding site of the wild-type endonuclease. The mutant protein failed to cleave the standard RNase III substrates in vitro but exhibited an affinity for double-stranded RNA when passed through poly(rI):poly(rC) columns. Filter binding and gel-shift assays with purified Rnc70 showed that the mutant protein binds to known RNase III mRNA substrates in a site-specific manner. In vitro processing reactions with purified enzyme and labelled RNA showed that the in vivo dominant effect of the mutant enzyme over the wild-type was not necessarily caused by formation of mixed dimers. Thus, the rnc70 mutation generates a mutant RNase III with impaired endonucleolytic activity but without blocking its ability to recognize and bind double-stranded RNA substrates.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 309 (1984), S. 59-61 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] LDV (a strain received from Dr K. E. K. Rowson), in the form of serum taken 24 h after intraperitoneal (i.p.) infection of mice, was added to resident peritoneal macrophages of GDI mice. Infected (antigen-containing) cells were scored by fluorescent antibody staining 10 h later. As the multiplicity ...
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 194 (1962), S. 1272-1272 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Stellar temperatures corresponding to neutron energies of 10-60 keV. have been suggested as typical for nucleogenesis. We have measured radiative capture cross-sections for seven of the tin isotopes by use of neutrons having an energy distribution of 18-46 keV. (mean energy, 30-4 keV.; full width ...
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 197 (1963), S. 369-370 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The isotopes samarium-150 and -148 are shielded from r-process1 production by stable neodymium-150 and -148, Thus the "-process only should have contributed to their creation in stars, and the products of their neutron capture cross-sections near 30 keV and their natural abundances should be nearly ...
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 102 (1990), S. 557-561 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Crystal Growth 82 (1987), S. 561-565 
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...