ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5601-5603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of step bunching on vicinal GaAs(001) annealed at different temperatures in AsH3 and H2 ambient was studied by scanning tunneling microscopy. The results provided aspects of the evolution of step bunching from the initial to the final stage. We observed a appearance of additional step bunchings which have a peculiar azimuth of 〈210〉, 〈21¯0〉, 〈310〉, and 〈31¯0〉.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357165
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Orientation independence of heterojunction-band offsets at GaAs-AlAs heterointerfaces characterized by x-ray photoemission spectroscopy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2555-2557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We systematically studied the orientation and the growth sequence dependence of the valence-band offset ΔEv at the lattice-matched common anion GaAs-AlAs interfaces. High quality GaAs-AlAs heterojunctions were carefully grown on GaAs substrates with three major orientations, namely, (100), (110), and (111)B. The core level energy distance ΔECL between Ga 3d and Al 2p levels was measured by in situ x-ray photoemission spectroscopy. ΔECL is found to be independent of the substrate orientation and the growth sequence, which clearly indicates the face independence of ΔEv. This result suggests that the band lineup at lattice-matched isovalent semiconductor heterojunctions is determined 〈/m1;&6p〉by the bulk properties of the constituent materials. ΔEv is determined to be 0.44 ± 0.05 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103815
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of stacking sequence on valence bands in Ga/As/Ge (001) monolayer superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1300-1302 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence bands of Ga/As/Ge (001) monolayer superlattices (MLSLs) are calculated by Harrison's tight-binding method. The MLSLs have two possible types of growth cycles: a (Ga,As,Ge,Ga,As,Ge) cycle for an antiphase type (AP type) and a (Ga,As,Ge,As,Ga,Ge) cycle for a normal phase type (NP type). Cations and anions in the AP type occupy "antisites'' of the zinc blende structure while those in the NP type occupy only "normal sites.'' The two types have distinct features of the valence bands concerning degeneracy of the bands at the zone boundary, splitting of the valence-band maximum due to the tetragonal symmetry, and valence-band discontinuity in a (bulk Ge)/(the MLSL) junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101638
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs. II. Distribution among samples (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1073-1078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoelectric fatigue and spike photoconductivity (SPC) are systematically studied in twenty-three pieces of undoped semi-insulating liquid-encapsulated Czochralski GaAs crystal (six ingots, four suppliers). Distributions among samples for photosensitivity, SPC-decay time constant, SPC spectrum, and oscillatory behavior are discussed. Through these studies, the metastable state X* (some kind of excited state of the main deep center X present in GaAs) is found to be classified into two states X@B|a and X*f , according to whether the electronic transition X*→X due to irradiation with the photon energy near 0.80 eV is allowed or forbidden, respectively. State X@B|a is responsible for the SPC phenomenon, while both states X*a and X@B|f are responsible for photoelectric fatigue. Moreover, the concentration of state X*a is estimated to be about 10−3 times that of state X*. These results suggest that there exist various configurations of metastable states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338201
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 68-70 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We succeeded in the fabrication of GaAs wires by an electron beam induced selective growth technique, for the first time. In situ irradiation of the electron beam, with simultaneous supply of tri-methyl-gallium (TMG) and cracked AsH3, formed a GaAs quasiquantum wire structure as narrow as 300 nm selectively. Auger analysis and dependence of the growth on source materials and types of substrate suggest that the selective growth results from the decomposition of TMG by the electron beam irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107376
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electrical properties of heavily Si-doped (311)A GaAs grown by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1171-1173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied the electrical properties of heavily Si-doped GaAs grown on the (311)A GaAs surfaces by molecular beam epitaxy. It is found that the conduction type drastically changes from p type to n type with decreasing growth temperature at a critical temperature of ∼430 °C for uniform doping and ∼480 °C for the δ-doping case, with the transition temperature width as narrow as ∼50 °C for both cases. The highest hole density obtained for uniformly doped layers was 1.5×1020 cm−3, while for δ-doped layers a sheet hole density as high as 2.6×1013 cm−2 was achieved, which is the highest sheet hole density ever reported for δ-doped p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112136
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electrochemical Er doping of porous silicon and its room-temperature luminescence at ∼1.54 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 983-985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new electro-chemical method for incorporating high concentration Er ions deep into porous silicon layers and its intense photoluminescence at ∼1.54 μm at room temperature. Porous silicon layers prepared by anodic etching of p-type silicon substrates in HF/H2O are immersed in ErCl3/ethanol solution. Then the negative bias relative to a counter platinum electrode is applied to the samples. Er3+ ions are drawn into fine pores of the porous silicon layers by the electric field. After thermal annealing at ∼1300 °C in an O2/Ar atmosphere, the samples show sharp and intense Er3+-related photoluminescence at ∼1.54 μm at room temperature upon excitation with an Ar ion laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112169
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of ytterbium-doped porous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2687-2689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yb3+-related photoluminescence is observed at room temperature from Yb-doped porous silicon layers prepared by the electro-chemical method developed by our group for Er doping of porous silicon layers. After rapid thermal annealing in a pure argon atmosphere at high temperatures (above ∼ 900 °C), samples show a sharp photoluminescence band at around 1.0 μm which is assigned to the intrashell 4f-4f transitions 2F5/2 → 2F7/2 of Yb3+. The enlarged energy bandgap of silicon as a result of anodization makes possible the excitation of Yb3+ 4f-electrons with the recombination energy of photocarriers generated in the host porous silicon layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114293
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Conduction-type conversion in Si-doped (311)A GaAs grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1444-1446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied the dependence of the electrical properties of Si-doped (311)A GaAs on the growth conditions in molecular beam epitaxy and have established a phase diagram for the conduction type as functions of the growth temperature and the V4/III flux ratio. A sharp boundary is observed for the transition between the p- and n-type conduction, on both sides of which the activation efficiency of Si is close to unity. Furthermore, it is found that, in contrast to the case of the (111)A GaAs, the conduction-type conversion in Si-doped (311)A GaAs does not show a clear correlation with the macroscopic surface morphology, suggesting that the mechanism for the conduction-type conversion in Si-doped (311)A GaAs is different from that for the (111)A orientation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114521
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3585-3587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a very controllable fabrication process of an extremely narrow (∼10 nm) quantum wire metal-oxide-semiconductor field-effect transistor (MOSFET) on a separation-by-implanted-oxygen (SIMOX) substrate using anisotropic etching and selective oxidation technique. The drain current versus gate voltage characteristics show oscillations caused by Coulomb blockade even at room temperature. The oscillations split into several sharp peaks when the temperature is decreased, indicating that the channel is separated by several serial coupled quantum dots and that the quantum levels of these dots correspond to the observed fine peaks. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116645
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...