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  • 1
    Electronic Resource
    Electronic Resource
    Nonideal J-V characteristics and interface states of an a-Si:H Schottky barrier (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2858-2867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theory is developed for nonideal J-V characteristics of Schottky barriers with an interfacial layer. This theory is based on the model that nonideal characteristics are due to changes of population in the interface states under applied bias and accompanying changes of the barrier height. The population in the interface states is expressed by the Fermi level, which can be determined by analyzing experimental results. The J-V characteristics are obtained from the flow of carriers into and out of the interface. Tunneling through the interfacial layer constitutes the bottleneck for the carrier flow. Under forward bias, the carrier concentration ns at the interface is proved to be in thermal equilibrium with the bulk. Under reverse bias, ns is in local thermal equilibrium with the interface states. This theory is applied to an undoped a-Si:H Schottky barrier without introducing any ambiguous quantities. The experimental ideality factor, its dependence on temperature and voltage, and current density are quantitatively explained. By analyzing experimental results, the following behaviors are disclosed. The Fermi level of the interface states is significantly lower than the bulk Fermi level at low forward bias, but it approaches the bulk Fermi level with increasing forward-bias voltage. As for the reverse characteristics, the decrease of the barrier height is proportional to (square root of)V in the present sample for applied voltage V. For electrons in the interface states, the probability of tunnel transition to the metal is small compared with that of communication with the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346418
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of GaAs Schottky/tunnel metal–insulator–semiconductor diode characteristics based on an interfacial layer model (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1272-1278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage (I-V) characteristics of GaAs Schottky and tunnel metal–insulator–semiconductor diodes were measured at various temperatures between 100 and 400 K and analyzed on a basis of an interfacial layer model recently proposed by Maeda, Umezu, Ikoma, and Yoshimura [J. Appl. Phys. 68, 2858 (1990)]. The ideality factor n obtained from the forward I-V characteristics increased from about 1.05–1.1 to 2–3 as the temperature was decreased from 400 to 100 K. This could be interpreted as an increase in the electron occupation ratio of the interface states with decreasing temperatures. Precise measurement of the n value of the I-V curve revealed anomalous behavior as a function of the forward current, which was not observed in either amorphous or crystalline Si Schottky diodes. This seems to be related to the presence of a density peak in the interface state distribution like those proposed by Spicer, Newman, Spinat, Liliental-Weber, and Weber, [J. Vac. Sci. Technol. A 8, 2084 (1990)]. The interfacial Fermi level was demonstrated to move from the metal Fermi level as applied voltage is increased, but it hardly moved relative to the conduction band bottom. This is considered to be the first direct evidence of Fermi level pinning in I-V characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353269
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of helicon-wave excited N2 plasma treatment on Fermi-level pinning in GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3234-3240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs(100) substrate was treated in a helicon-wave excited N2 plasma for short time (5–15 min). Current density–voltage (J–V) characteristics were measured for the Schottky or tunnel metal–insulator–semiconductor diode. The Schottky barrier height obtained from Richardson plot was about 0.3–0.4 eV for the plasma-treated samples independent of the plasma exposure time, while it was about 0.7 eV for the untreated one. The ideality factor and the reverse (leakage) current were much higher for the plasma-treated GaAs than for the untreated ones. The bulk carrier density showed a small decrease near the GaAs surface only for the plasma-treated samples. A very high density of the interface states was observed at EC=0.3–0.4 eV from the analysis of J–V characteristics based on the Horváth's theory [J. Appl. Phys. 63, 976 (1988)]. These experimental results indicated that the high density of the interface states were generated at the energy of EC=0.3–0.4 eV, probably due to plasma-induced damage, and the surface Fermi level was strongly pinned at this energy position, though the midgap pinning was removed or partially removed due to the plasma treatment. Some possible reasons of this removal of the midgap pinning are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369665
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  • 4
    Electronic Resource
    Electronic Resource
    Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 551-557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide nitride–oxide–Si (MONOS) structure was fabricated using the oxidation-nitridation series with helicon-wave O2–Ar and N2–Ar plasmas, respectively. The detrimental effect of Ar ion etching was minimized during the fabrication process by controlling the plasma–sheath width. The top oxide was very thin (∼1–2 nm) as compared with nitride (∼12–13 nm) and bottom oxide (∼7–8 nm). Fowler–Nordheim tunneling electron injection was performed in this MONOS diode for both dc and pulsed stress voltages with the electrical polarity being changed. For the positive stress voltage, the shift of the threshold voltage Vth was negative and larger for the smaller stress voltage. It was higher for the pulsed stress than for the dc one. On the other hand, Vth shift is positive and smaller for the pulsed stress than for the dc one for the negative stress bias. These findings can almost be explained by the avalanche breakdown model together with the effect of the total amount of the injected carries. Terman analysis indicated that the interface state density did not increase after both positive and negative stresses, which was probably due to film structure and the presence of a small amount of Si oxynitride (or Si–N–O bonds) at the insulator/Si interface. Write/erase characteristics were also briefly discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369488
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  • 5
    Electronic Resource
    Electronic Resource
    Fowler–Nordheim current–stress resistance of Si oxynitride grown in helicon-wave excited nitrogen–argon plasma (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4108-4114 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fowler–Nordheim (FN) tunneling electron injection was performed in Al/Si oxynitride/Si capacitors and compared with the results for the thermal Si oxides grown at 850 and 900 °C as well as the plasma oxide. The Si oxynitride was grown by direct oxynitridation of the Si substrate using helicon-wave excited nitrogen–argon mixed plasma around room temperature. The shift of the threshold voltage Vth [the inversion voltage of capacitance–voltage (C–V) curves] was much larger for the negative stress than for the positive stress, similar to the case of SiO2. The Vth shifts were much smaller for the plasma-grown Si oxynitride than for the thermal and plasma SiO2 when the oxynitride sample was annealed at moderate temperatures (300–500 °C) in nitrogen ambient. These findings can be explained on the basis of surface plasmon and avalanche breakdown models proposed as the explanation of hot-carrier injection instability in SiO2. When the Si oxynitride samples were annealed at high temperature (800 °C), anomalous C– curves were observed and the degradation was very great, especially for positive bias FN stress. These results are also tentatively explained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365722
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed Fowler–Nordheim current stress resistance of Si oxynitride grown with helicon-wave excited nitrogen–argon plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7685-7692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed Fowler–Nordheim (FN) current stress resistance was investigated for the Si oxynitride grown in the helicon-wave excited N2–Ar plasma. The shift of the gate threshold voltage Vth increased with an increase in the pulse frequency for both polarities of the applied stress voltage. At low frequencies (〈1 kHz), the Vth shift was larger for the negative gate-voltage stress than for the positive one. However, as the frequency exceeds about 1 kHz, the Vth shift become much higher for the positive stress than for the negative one. The Vth shift was smaller as the pulse duty ratio was larger. These findings could be explained with the surface–plasmon and avalanche breakdown models combined with the effect of the total amount of the injected carriers to the oxynitride from the Si substrate or the gate electrode. The effect of Ar ion etching during plasma processing on the FN stress resistance was also investigated. The Ar ion etching effect was found to be substantially reduced as the plasma-sheath width was large and Si oxynitride samples were grown under this condition. The mean time to failure was highly improved by the Si oxynitride samples grown under the condition of reduced Ar ion etching effect. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367890
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  • 7
    Electronic Resource
    Electronic Resource
    Current-voltage characteristics and interface state density of GaAs Schottky barrier (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2560-2562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A density distribution of the interface states in GaAs Schottky barrier was derived for the first time from observed nonideal I-V characteristics of a GaAs Schottky barrier with an oxidized interface. With increasing forward bias voltage, the ideality factor increases and then decreases after passing a maximum. Fermi level of the interface states shifts with the applied bias in the interfacial layer model adopted for the analysis. The obtained energy level of the interface states is in agreement with a previously reported value. However, the absolute magnitude of the state density is quite small compared with that obtained from the weak dependence of the barrier height on metal work functions. Implications of this result are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109296
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "Current-voltage characteristics and interface state density of GaAs Schottky barrier'' [Appl. Phys. Lett. 62, 2560 (1993)] (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3667-3667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112001
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  • 9
    Electronic Resource
    Electronic Resource
    Bias dependence of Schottky barrier height in GaAs from internal photoemission and current-voltage characteristics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3977-3982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bias dependence of Schottky barrier height φB was directly measured using an internal photoemission effect in Au-n-GaAs Schottky barrier diodes under both the forward and reverse applied voltages. φB increased by about 0.015–0.016 eV as the forward bias increased from 0 to 0.3 V. This is probably due to an applied-voltage-induced change in electron population in the interface states. The results were compared with the bias dependence derived from dark forward current-voltage (I-V) characteristics. Both bias dependences were in good agreement, indicating that nonideal forward I-V characteristics (a deviation from the ideal thermionic emission theory) could be fully explained by the bias dependence of φB for diodes of a relatively good quality (an ideality factor, n=1.02–1.07). The effective Richardson constant A** was calculated to be about 1.3–1.4×105 A K−2 m−2 for the diodes of the lower n values using the value of the measured Schottky barrier height at zero bias. These values of A** were higher than the calculated value of about 8×104 A K−2 m−2 and that of 0.41±0.15×104 A K−2 m−2 reported by Missous and Rhoderick [J. Appl. Phys. 69, 7142 (1991)]. This is probably due to an enhancement of an electron tunneling through the high density interface states in our case. φB decreased by about 0.05–0.06 eV when the reverse voltage increased from 0 to 3.0 V. An image force lowering effect could not account for this large reverse bias dependence of the barrier height. The nonideal reverse I-V characteristics could not be interpreted solely by the bias dependence of φB. This discrepancy was attributed to other leakage current mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354467
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  • 10
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    Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-01-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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