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  • 1
    Electronic Resource
    Electronic Resource
    Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7567-7574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral and the time dependent piezoelectric photoacoustic (PPA) measurements under the continuous light illumination were carried out at 85 K to investigate nonradiative recombination processes involving EL2 defect levels in carbon concentration controlled and not intentionally doped semi-insulating (SI) GaAs. The decrease of the PPA signal due to the photoquenching effect of EL2 is observed for a short period of illumination in the photon energy region from 1.0 to 1.3 eV. Since almost all of the carbon acceptors are compensated by deep donor EL2 in SI GaAs, electron occupancy of EL2 level can be controlled by changing the carbon acceptor concentration. It is found that the photoquenching becomes drastic with increasing the carbon concentration. After fully photoquenching, the PPA signal increases again through a local minimum by the continuous light illumination and finally exceeds the initial value before illumination until the saturation level is reached. The deep donor level EL6 and its metastable state are proposed. EL6 level donates electrons to compensate a part of carbon acceptors after EL20 to EL2* transition is accomplished. The nonradiative recombination through this level generates the PPA signal. Since the PPA measurement can detect lower concentration of EL6 than that of EL2, the higher sensitivity of the PPA measurements than the optical absorption measurements is pointed out. The usefulness of the PPA technique for studying the nonradiative transition through deep levels in semiconductors is also suggested. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365300
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of layer semiconductor p-GaSe doped with Cu (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4779-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363418
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  • 3
    Electronic Resource
    Electronic Resource
    Impurity levels in layer semiconductor p-GaSe doped with Mn (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity levels in Mn-doped GaSe have been investigated by using photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS) measurements. The emission band at 1.82 eV is observed on the PL spectra of the samples doped with Mn of wide range from 0.01 to 1.0 at. %. We find, from the temperature dependences of PL intensity and peak energy, that the 1.82 eV emission band is due to the transition between the conduction band and the acceptor level at 0.32 eV above the valence band. The acceptor level located at about 0.34 eV above the valence band is detected by using HE and DLTS measurements. The dominant acceptor level in the carrier transport shows almost the same position as that of the radiative recombination center. This acceptor level is probably associated with the defects formed by Mn atoms in the interlayer or interstices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357145
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  • 4
    Electronic Resource
    Electronic Resource
    Zn-induced impurity levels in layer semiconductor InSe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3647-3650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity levels in Zn-doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor-Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344075
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of p-GaSe doped with Cd (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7936-7938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurity levels in Cd-doped GaSe have been studied by using photoluminescence (PL) measurements. The PL spectra at 77 K are dominated by three new emission bands at 1.95, 1.75, and 1.62 eV. The PL intensity and the peak energy of the 1.95 and 1.62 eV emission bands are measured as a function of the temperature. It is shown that the 1.95 eV emission band is due to the transition between the conduction band and the acceptor level at 0.18 eV above the valence band. The 1.62 eV emission band is caused by the transition from the donor level at 0.37 eV below the conduction band to the acceptor level at 0.13 eV above the valence band. The PL intensity increases with increasing Cd concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347488
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  • 6
    Electronic Resource
    Electronic Resource
    Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2408-2413 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric photoacoustic (PA) measurements on liquid-encapsulated-Czochralski-grown n-GaAs were carried out at room temperature. A continuous broad band below 1.35 eV and a peak at 1.383 eV were observed in the PA amplitude spectra. By comparing with the optical-absorption spectra, it is concluded that the broad band is due to the electron transition involving the EL2 deep-lying defect levels. For the observed peak at 1.383 eV, the origin is considered to be dislocation related. The possibility that this peak is an apparent one expected from the proposed models for the PA signal generation is denied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351098
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characteristics of layer semiconductor p-GaSe doped with Cd (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4686-4688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352765
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature photoacoustic measurements by a transducer technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 17-19 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple technique for photoacoustic spectroscopy at low temperature using a rf-sputtered ZnO film transducer is described. We succeed in obtaining the spectra of InSe at low temperatures. The signals due to the free exciton annihilation and the nonradiative donor to valence band transition are clarified by the present technique. These results establish the usefulness of low-temperature photoacoustic spectroscopy for studying transition processes in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139109
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  • 9
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of layer semiconductor p-GaSe doped with Zn (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4125-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman technique in a wide range from 0.005 to 0.5 at. % to the stoichiometric melt. Radiative recombination mechanisms have been investigated by using photoluminescence (PL) measurements. The PL spectra in Zn-doped samples at 77 K are dominated by three emission bands at 1.75, 1.63, and 1.27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the increase in the amount of Zn. In addition to the results of Hall effect measurements, it is found that the 1.63 and 1.27 eV emission bands are associated with the acceptor levels at 0.12 and 0.3 eV above the valence band, respectively. For the 1.27 eV emission band, the temperature dependences of the PL intensity, peak energy, and half-width are characterized by the configurational coordinate model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354436
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  • 10
    Electronic Resource
    Electronic Resource
    Expression in E. coli of finger-domain lacking tissue-type plasminogen activator with high fibrin affinity
    Amsterdam : Elsevier
    FEBS Letters 189 (1985), S. 145-149 
    Details
    ISSN: 0014-5793
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0014-5793(85)80860-7
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