ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Adsorption of Ba on the GaAs(110) surface and its effect on surface oxidation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2833-2837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adsorption of Ba and its effect on the GaAs(110) surface oxidation has been studied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The Ba adsorption onto the surface results in a disordered interface of Ba and the GaAs surface at temperatures 〈500 °C. However, the reactivity of the GaAs surface to oxygen is dramatically enhanced by the adsorbed Ba atoms. This enhancement of the surface oxidation is proportional to the Ba exposure. Study of LEED and AES intensities has also revealed evidence of Ba-induced surface disorder on the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349346
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Oxygen desorption from YBa2Cu3O7−x and Bi2CaSr2Cu2O8+δ superconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1591-1595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen desorption experiments from YBa2Cu3O7−x (YBCO) and Bi2CaSr2Cu2O8+δ (BSCCO) superconductors were carried out using a quadrupole mass spectrometer for monitoring the desorbing species and x-ray photoemission spectroscopy for surface characterization. Molecular oxygen was found to desorb from both superconductors following photoirradiation with ultraviolet/optical radiation and subsequent heating at over 150 °C. Both YBCO and BSCCO were found to have similar oxygen desorption rates and similar activation energies (1012–1013 molecules/cm2 s and ∼1.5 eV/molecule, respectively). The desorption data as well as the x-ray photoemission data indicate that the oxygen desorption is not intrinsic to the superconductors but rather due to molecular oxygen entrapped in the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349522
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of the Si(100) surface promoted by Sr overlayer: An x-ray photoemission study (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3609-3613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of strontium overlayers with atomically clean Si(100) surface has been studied by x-ray photoelectron spectroscopy. Also studied were the effects of Sr overlayers on the oxidation of silicon at different Sr coverage (0≤θ≤1.85) and different oxygen exposure. It is found that at low coverage, θ≤1 monolayer (ML), Sr interacts with the Si(100) surface to form a strong ionic bond. Also, Sr is found to significantly increase the oxidation of the Si(100) surface. Silicon oxidation increased with increasing Sr coverage to a maximum at θ≈1 ML. Above 1-ML Sr coverage, the rate of Si oxidation decreased with increasing coverage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346321
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Oxygen-induced Al surface segregation in AlxGa1−xAs and the effect of Y overlayers on the oxidation of the Y/AlxGa1−xAs interface (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1943-1948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of AlxGa1−xAs (x=0.15, AlGaAs) was studied by Auger electron spectroscopy and x-ray photoelectron spectroscopy at 350 °C and different oxygen exposures (up to 5×104 L). Also studied were the effects of yttrium overlayers (θ=3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and non-yttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the non-yttriated surface. Also, while oxidation of the non-yttriated AlGaAs yielded mainly Al2Ox (x〈3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and non-yttriated surfaces were found to contain metallic As within the oxide layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351184
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A ferroelectric-superconducting photodetector (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7130-7133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferroelectric-superconducting photodetector has been developed and characterized. An atomically ordered PbZrTiO3 (PZT) ferroelectric gate was grown over a c-oriented YBa2Cu3O7−x (YBCO) high Tc superconductor substrate by excimer laser deposition. Irradiation of the PZT gate with photons near the ferroelectric gap energy resulted in a measurable change of the drain-source photocurrent with the device at a temperature near Tc of the YBCO. The critical temperature of the YBCO base was shifted up to 4 K when the PZT gate was irradiated with photon flux of wavelength from 300 to 500 nm. A responsivity of 360 A/W was measured and an upper bound on response time to optical irradiation of 100 ns was determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363733
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of infrared photocurrent in Pb(Zr,Ti)O3 on YBa2Cu3O7−x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4780-4783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) (001) thin films, integrated to high Tc superconducting YBa2Cu3O7−x (YBCO) films used as electrodes, have been studied for their photocurrent response and permittivity as a function of temperature. A stable photocurrent was observed to increase with increasing the temperature over the range of 25–350 °C. This increase was found to be strongly polarization dependent and due to the change of the pyroelectric coefficient of PZT thin film with temperature. The pyroelectric coefficient for a PZT sample was measured as ∼30 nC/cm2 K at room temperature, and ∼80 nC/cm2 K at 320 °C. The YBCO electrode showed a stable metallic resistance behavior in this temperature range. There was no detectable photocurrent from YBCO layer. No poling is required until 350 °C for the PZT/YBCO heterostructure detector because the PZT film is oriented when grown on c-axis oriented YBCO. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359825
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Infrared photoresponse of (Mn,Sb) doped-Pb(Zr,Ti)O3/YBa2Cu3O7 heterostructure detectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4980-4984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn- and Sb-doped PbZrTiO3 (PMSZT) thin-film pyroelectric infrared (IR) detectors have been fabricated on c-oriented YB2Cu3O7−x (YBCO) thin films. The thin-film heterostructure detectors were prepared by pulsed laser deposition on LaAlO3 (100) substrates. The YBCO layer in the PMSZT/YBO heterostructure was used as an atomic template for the epitaxial growth of the PMSZT thin films, as well as a nonsuperconducting electrode and IR reflector in the detector. Mn and Sb doping was used to tune the Pb(Zr,Ti)O3 transition temperature to a lower value (Curie temperature of ∼170 °C), and hence, to modify the pyroelectric and dielectric properties of the pyroelectric material. The PMSZT IR detectors were examined as to their photovoltage and photocurrent in response to IR source temperature, detector temperature, and chopper frequency. The experimental results show that the detector has relatively high IR sensitivity with a detectivity D* of ∼4×108 cm Hz1/2/W, and is capable of operating from room temperature to ∼170 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367301
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial growth of InSb (111) on sapphire (0001) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1916-1917 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, transmission electron microscopy, and scanning electron microscopy data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 〈111〉 direction. Mobility data show room-temperature mobilities as high as 1×104 cm2 /V s from some regions on the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101240
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    (Mn, Sb) doped-Pb(Zr, Ti)O3 infrared detector arrays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1004-1007 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Mn, Sb) doped Pb(Zr, Ti)O3 (PMSZT) thin film infrared (IR) detectors were integrated with Si substrates. The epitaxial PMSZT thin films, deposited on c-axis oriented YBa2Cu3O7−y (YBCO) bottom electrodes, show good ferroelectric properties with a remnant polarization Pr of 31 μC/cm2, a spontaneous polarization Ps of 38 μC/cm2, and a coercive field Ec of 21 kV/cm under an electric field of 76 kV/cm. Doping with Mn and Sb into Pb(Zr, Ti)O3 (PZT) not only decreased the Curie temperature TC from 350 °C for PZT to 175 °C for PMSZT, but also enhanced IR responsivity significantly. PMSZT thin films show high figures of merit, Fi of 15.5×10−9 C cm/J, Fv of 1758 cm2/C and Fd of 5×10−5 Pa−1/2 at 25 °C. IR detector arrays, fabricated with PMSZT films deposited on YBCO microbridges with an air gap between them and the substrate for reduced thermal mass, show a higher IR voltage responsivity compared to those without an air gap. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373769
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Etching of tungsten with XeF2: An x-ray photoelectron spectroscopy study (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4587-4590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ x-ray photoelectron spectroscopy measurements of both W(100) crystals and sputter-deposited tungsten films exposed to a molecular beam of XeF2 with and without an accompanying argon ion beam have yielded the fluorine coverage and the chemical states of the adsorbed fluorine as a function of temperature, exposure, and ion dose. WF, WF2, WF3, and WF4 were found to exist on the tungsten surfaces. Room and elevated temperature exposures of clean tungsten resulted in the surface population of mainly WF species with WF4 observed on nonannealed samples. Ion dose promoted the formation of higher fluorine coordination species from the WF leading to the formation of volatile WF6 and thus resulting in ion-enhanced etching of tungsten.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339054
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...